ESE-505 Semiconductor Materials and Technology: Class 02

ESE-505 Semiconductor
Materials and
Technology
Class 02
Course Contents
Theory of solid-state physics to give
basic information necessary to
understand device physics;
PN junction operation;
Schottky-barrier contacts;
ohmic contacts
Hetrojuntion
Course Contents
BJT operation,
forward current,
base recombination current,
uniform and non-uniform doping,
planar BJT structures,
limitations of simple analytical BJT
models;
Course Contents
quantum wires,
quantum dots,
resonant tunneling diodes,
charge coupled devices;
Course Contents
Fabrication techniques of
semiconductor devices:
fundamental principles of "front-end"
processes used in the fabrication of
devices for silicon integrated circuits
Course Contents
advanced physical models and
practical aspects of major processes
such as oxidation,
diffusion,
ion implantation, and
epitaxy;
issues in modern device scaling
What is Semiconductor
Conductivity between conductor and
insulator
Conductivity can be controlled by
dopant
Silicon and germanium
Compound semiconductors
SiGe, SiC
GaAs, InP, etc.
Hong Xiao, Ph. D.
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Periodic Table
of the Elements
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Semiconductor Substrate and

Dopants
Substrat
e
P-type
Dopan
t
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N-type
Dopants
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Orbital and Energy Band Structure

of an Atom
Valence shells
Conducting band, Ec
Nuclei
Band gap, Eg
Valence band, Ev
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Band Gap and Resistivity
Eg = 1.1 eV
Eg = 8 eV
Aluminum
Sodium
Silicon
Silicon dioxide
2.7 cm
4.7 cm
~ 1010 cm
> 1020 cm
Conducto
rs
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Semiconduc
tor
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Insulat
or
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Crystal Structure of Single Crystal

Silicon
Shared electrons
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
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Si
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Why Silicon
Abundant, inexpensive
Thermal stability
Silicon dioxide is a strong
dielectric and relatively easy to
form
Silicon dioxide can be used as
diffusion doping mask
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N-type (Arsenic) Doped Silicon

and Its Donor Energy Band
Si
Conducting band, Ec
Si
Si
Extra
Ed ~ 0.05 eV
Electron
Si
As
Si
Si
Si
Eg = 1.1 eV
Si
Valence band, Ev
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P-type (Boron) Doped Silicon

and Its Donor Energy Band
Conducting band, Ec
Si
Si
Si
Hole
Si
Eg = 1.1 eV
Si
Ea ~ 0.05 eV
Si
Si
Si
Electron
Hong Xiao, Ph. D.
Valence band, Ev
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Dopant Concentration and

Resistivity
Resistivity
P-type, Boron
N-type,
Phosphorus
Dopant concentration
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Dopant Concentration and

Resistivity
Higher dopant concentration, more
carriers (electrons or holes)
Higher conductivity, lower resistivity
Electrons move faster than holes
N-type silicon has lower resistivity
than p-type silicon at the same
dopant concentration
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Basic Devices
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Resistor
Capacitor
Diode
Bipolar Transistor
MOS Transistor
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Resistor
h
w
l
R
wh
: Resistivity
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Resistor
Resistors are made by doped silicon
or polysilicon on an IC chip
Resistance is determined by length,
line width, height, and dopant
concentration
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Capacitor
s
hl
C
d
: Dielectric
Constant
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Capacitors
Charge storage device
Memory Devices, esp. DRAM
Challenge: reduce capacitor size
while keeping the capacitance
High- dielectric materials
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Capacitors
Dielectric Layer
Dielectric
Layer
Poly Si
Oxide
Si
Poly 2
Poly
Si
Si
Poly 1
Heavily
Doped Si
Parallel
plate
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Stack
ed
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Deep
Trench
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Metal Interconnection and RC

Delay
Dielectric,
Metal,
I
d
w
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Diode
P-N Junction
Allows electric current go through
only when it is positively biased.
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Diode
V1
V2
P1
V1 > V2 ,
current
V1 < V2 ,
no current
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P1 > P2 ,
P2
current
P1 < P2, no current
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Figure 3.14
Transition region
Vp
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+
+
+
+
+
+
+
+
+
+
V0
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Vn
27
I-V Curve of Diode
-I
V
0
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Bipolar Transistor
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PNP or NPN
Switch
Amplifier
Analog circuit
Fast, high power
device
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NPN and PNP Transistors

E
E
N
C
N
C
C
E
B
C
P
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MOS Transistor
Metal-oxide-semiconductor
Also called MOSFET (MOS Field Effect
Transistor)
Simple, symmetric structure
Switch, good for digital, logic circuit
Most commonly used devices in the
semiconductor industry
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NMOS Device
Basic Structure
VG
VD
VG
Metal Gate
Ground
n+
Source
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p-Si
VD
n+
Drain
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MOSFET
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Basic Circuits
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Bipolar
PMOS
NMOS
CMOS
BiCMOS
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Market of Semiconductor Products

Compound
100%
Bipolar
50%
MOSFET
1980
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1990
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4%
8%
88%
2000
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Bipolar IC
Earliest IC chip
1961, four bipolar transistors,
$150.00
Market share reducing rapidly
Still used for analog systems and
power devices
TV, VCR, Cellar phone, etc.
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CMOS Inverter
Vdd
PMOS
V in
Vout
NMOS
Vss
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IC Chips
Memory
Microprocessor
Application specific IC (ASIC)
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CMOS
In the 1980s MOSFET IC surpassed
bipolar
LCD replaced LED
Power consumption of circuit
CMOS replaced NMOS
Still dominates the IC market
Backbone of information revolution
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Advantages of CMOS
Low power consumption
High temperature stability
High noise immunity
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CMOS Inverter, Its Logic Symbol and

Logic Table
Vdd
Vin
Vout
PMOS
Vin
Vout
NMOS
Vss
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In
Out
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Summary
Semiconductors are the materials
with conductivity between conductor
and insulator
Its conductivity can be controlled by
dopant concentration and applied
voltage
Silicon, germanium, and gallium
arsenate
Silicon most popular: abundant and
stable oxide
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Summary
Boron doped semiconductor is p-type,
majority carriers are holes
P, As, or Sb doped semiconductor is ptype, the majority carriers are electrons
Higher dopant concentration, lower
resistivity
At the same dopant concentration, ntype has lower resistivity than p-type
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Basic Building Blocks of Semiconductor Devices
(a) M-S Junction (b) P-N Junction (c) Heterojuction (d)

MOS structure
44
The P-N Diode --- Under Biasing Conditions
Current-voltage characteristics
of a typical Si p-n junction
(a) Thermal
equilibrium
(b) Forward-bias
condition.
(c) Reverse-bias
45
Classification of Semiconductor Devices
Bipolar Devices
Unipolar Devices
P-N Junction Diode

Bipolar Junction Transistor (BJT)
Heterojunction Bipolar Transistor (HBT)
Thyristor and related power devices
Schottky-barrier diode (SBD)
Junction Field Effect Transistor (JFET)
Metal-Oxide-Semiconductor FET (MOSFET)
MOS Diode (Capacitor)
Complementary MOS (CMOS) BiMOS and BiCMOS
Power MOS
High-Speed Devices
Metal-Semiconductor FET (MESFET)

Modulation-Doped FET (MODFET), High-Electron-Mobility Transistor (HEMT)
46
Semiconductor Devices (continued)
Microwave Devices
Tunnel diode
IMPATT diode
Transferred-Electron Device (TED)
Quantum-Effect Devices
Hot-Electron Devices
Photonic Devices
Light Emitting Diode (LED)

Semiconductor Laser (Laser Diode, LD)
Photodetector
Photodiode (PD), Avalanche Photodiode (APD)

Phototransistor (PT)
Solar Cell
Display Devices
Thin-Film Transistor LCD (TFT-LCD)

Organic Electroluminescence Display (OELD) or Organic Light Emitting Diode (OLED)
47
Semiconductor Devices (continued)
Integrated Devices
Passive Components
IC Resistor, IC Capacitor, IC Inductor
MOS Menory
Dynamic Random Access Memory (DRAM)

Static Random Access Memory (SRAM)
Nonvolatile Memory
Erasable-Programmable Read-Only Memory (EPROM)
Electrically Erasable-Programmable Read-Only Memory (EEPROM)
Flash Memory
Single-Electron Memory
MEMS devices
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The Bipolar Junction Transistor (BJT)
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The MOSFET
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MESFET
Schottky
Contact
Ohmic Contact
Mesa Structure
To minimize parasitic
capacitances
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MODFET
Modulation Doped FET
A thin undoped well
bounded by two wider
bandgap doped barrier
HFET (Heterojunction FET)

2DEG FET or TEGFET,
SEDFET (Separately Doped
FET)
Advantages:
Extremely high cutoff
frequency and fast access
time
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ESE-505 Semiconductor

Hong Xiao, Ph. D.

Semiconductor Substrate and

Hong Xiao, Ph. D.

Orbital and Energy Band Structure

Hong Xiao, Ph. D.

Band Gap and Resistivity

Hong Xiao, Ph. D.

Crystal Structure of Single Crystal

Hong Xiao, Ph. D.

N-type (Arsenic) Doped Silicon

Hong Xiao, Ph. D.

P-type (Boron) Doped Silicon

Hong Xiao, Ph. D.

Dopant Concentration and

Dopant Concentration and

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Metal Interconnection and RC

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

P1 < P2, no current

I-V Curve of Diode

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

NPN and PNP Transistors

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Market of Semiconductor Products

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

CMOS Inverter, Its Logic Symbol and

Hong Xiao, Ph. D.

Basic Building Blocks of Semiconductor Devices

(a) M-S Junction (b) P-N Junction (c) Heterojuction (d)

The P-N Diode --- Under Biasing Conditions

Classification of Semiconductor Devices

P-N Junction Diode

Metal-Semiconductor FET (MESFET)

Semiconductor Devices (continued)

Light Emitting Diode (LED)

Photodiode (PD), Avalanche Photodiode (APD)

Thin-Film Transistor LCD (TFT-LCD)

Semiconductor Devices (continued)

Dynamic Random Access Memory (DRAM)

The Bipolar Junction Transistor (BJT)

HFET (Heterojunction FET)

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