Etching
Etching
Patterned
Material Selectivity is Important!!
Un-patterned
x
Etching
y
Dry Etch Wet Etch=Dissolution
Isotropic
An-isotropic dy/dt:dx/dt:1.2
dy/dt:dx/dt:6 Si Etch
Gas Phase Reaction Strong HF
SiO2 Etch
with volatile products Strong NH4OH not NaOH (Na
Frequent use of very ion is bad)
Si3N4 Etch
reactive species in a Phosphoric Acid
Plasma Metal Etch
Si Etch Acid Solution (HNO3)
SiO2 Etch Photoresist
Solvent
Metal Etch H2SO4 Solution
Etching
Wet
and Dry Etch have very different
chemical reactions!
X
Global Dissolution Rate/Time
Depends on
Mass Transfer
Diffusion Coefficient
Velocity along wafer surface
Size of wafer
Solubility
Density of film being etched
Wet Etch Reaction
Wafers in Carriage
Placed in Etch
Solution
How Long??
Boundary Layer MT is
Rate Determining
Flow over a leading
edge for MT
Derivation & Mathcad Also a C for the
solution
Concentration profile
Local Dissolution Rate/Time
Depends on
Mass Transfer
Diffusion Coefficient
Velocity along wafer surface
Size of wafer
Solubility
Density of film being etched
Position on the wafer
see photoresist dissolution example
Dry Etch
Physical Evaporation
Not typically used
Heating chip diffuses dopants out of
position
Sputteringfrom a target
Plasma reactor with volatile reaction
product
RF Plasma Sputtering for
Deposition and for Etching
RF + DC field
Removal Rate
Sputtering Yield, S
S=(E1/2-Eth1/2) 5.2 Zt Zx
2/3
Z Z
U ( Z t2 / 3 Z x2 / 3 )3 / 4
t x
Deposition Rate
Ion current into Target *Sputtering Yield
Fundamental Charge
Plasma
Free Electrons accelerated by a strong
electric field
Collide with gas molecules and eject e-
Collision creates more free electrons
Free electrons combine with ions to form free
radicals
Gas Ions/Free Radicals are very reactive with
materials at the wafer surface
Ions non-selective removal
Free Radicals
Plasma Conditions
Reduced Pressure ~100 mtorr
Flow of gases in and out
DC or AC (rf) electric field
Parallel plate electrodes
Other geometries
Dry Etch Chemistries
Gas Surface Etched
O2 Pre-clean
95%CF4-5% O2 Si
50%CF4-25%HBr-25%O2 Poly Si
75%Cl2-25%HBr Metal etch
X
Plasma Etch Rate of Polymers
Residue Build-up
Plasma Etch Rate of Polymers
Clean developed Photoresist off of wafer