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TECHNOLOGY
INTRODUCTION
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i) Small Scale Integration:- (10-100) transistors => Example: Logic
gates
ii) Medium Scale Integration:- (100-1000) =>
Example: counters
iii) Large Scale Integration:- (1000-20000) =>
Example:8-bit chip
iv) Very Large Scale Integration:- (20000-1000000) => Example:16 &
32 bit up
v) Ultra Large Scale Integration:- (1000000-10000000) => Example:
Special processors, virtual reality machines, smart sensors
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IC Technology
Moore’s Law
Definition: As Gordon Moore(one of the founder of Intel)
predicted in the early 1970s that number of transistors
per chip continued to double every one and half year or
18 months at the same time dimension of the transistor is
dropped down from 25µm in 1960 to 0.18µm in 2000
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Transistors integrated on a chip
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Symbols for n-MOS and P-MOS
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Cont…
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• We have PMOS and NMOS transistors.
• They are Enhancement mode and Depletion mode of operation
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Mask Layout Encoding Styles for Different materials
BLUE
RED
GREEN
DARK YELLOW
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Accumulation
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Depletion Mode
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Inversion
http://www.kenfreed1.com/flash/mosfet1.html
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Enhancement mode Transistor
In Enhancement mode transistor channel is going to form after
giving a proper gate voltage.
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n-Mos Depletion mode Transistor
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Action of Enhancement Mode Transistor
non-saturation Region or linear region : the drain current(Ids) increases
linearly with Vds and the channel starts to narrow on drain side.
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Cont..
Saturation Region: the drain current remains almost constant. (As the drain
voltage is increased further beyond (Vgs-Vt) the pinch off point starts to move
from the drain end to the source end)
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n-Mos Fabrication (Preparation of Silicon Die)
Steps 1-3
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Cont..
Steps 4-5
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Cont..
Steps 6-9
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Diffusion Process
Diffusion
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n-MOS fabrication process
Substrate
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n-MOS fabrication process
SiO2
Substrate
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Cont….
Photo-Resist
SiO2
Substrate
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Cont…
Photo-Mask
Photo-Resist
SiO2
Substrate
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Cont….
SiO2
Substrate
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Cont…
SiO2 SiO2
Substrate
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Polysilicon on thin oxide
Thin layer of SiO2(0.1µm) grown and then polysilicon is
deposited on top to form gate structure.
SiO2
Poly Si
Thinox
Substrate
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Metallization
SiO2 Poly Si
Thinox
n n
Substrate
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Cont…..
SiO2
Poly Si
Thinox
n n
Substrate
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Cont…
SiO2
Poly Si
Thinox
n n
Substrate
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• When we need to fabricate both nMOS
and pMOS transistors on the same
substrate we need to follow different
processes.
• The three different processes are , P-
well process ,N-well process and Twin
tub process.
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CMOS P-well Fabrication
Steps 1-4
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Cont..
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Substrate and Well taps or Contacts:
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Formation of n-well regions
p+ diffusion
n+ diffusion
Contact cuts
Mask 2: Defines the thin oxide region (where the thick oxide is to be removed or
stripped and thin oxide grown)
Mask 3: It’s used to pattern the polysilicon layer which is deposited after thin
oxide.
Mask 4: A p+ mask (anded with mask 2) to define areas where
p-diffusion is to take place.
Mask 5: We are using the –ve form of mask 4 (p- mask) It
defines where n-diffusion is to take place.
Mask 6: Contact cuts are defined using this mask.
Mask 7: The metal layer pattern is defined by this mask.
Mask 8: An overall passivation (over glass) is now applied and it also defines
openings for accessing pads.
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Twin-tub Process
It is made with both n-well and p-well region.
Epitaxial layer: High purity silicon grown with accurately
determined dopant concentrations
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Bi-CMOS Technology
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Comparison between CMOS and Bipolar technologies
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