Bipolar Junction

Transistor Circuit Analysis

 BJT Transistor Circuit Analysis

1.Large signal DC analysis

2.Small signal equivalent
3.Amplifiers

Chapter 13: Bipolar

Junction Transistors
Circuit with BJTs
Our approach: Operating point - dc operating point
Analysis of the signals - the signals to be amplified

Circuit is divided into: model for large-signal dc analysis of BJT circuit

bias circuits for BJT amplifier
small-signal models used to analyze circuits for
signals being amplified

Remember !
 Large-Signal dc Analysis: Active-Region Model
Important: a current-controlled current source models the
dependence of the collector current on the base current

VCB
reverse bias ?

VBE ?
forward bias

The constrains for IB and VCE must be satisfy to keep BJT in the
active-mode
Large-Signal dc Analysis: Saturation-Region Model

VCB
?
forward bias

VBE ?
forward bias
 Large-Signal dc Analysis: Cutoff-Region Model

VCB
reverse bias ?

VBE ?
reverse bias

If small forward-bias voltage of up to about 0.5 V are applied, the

currents are often negligible and we use the cutoff-region model.
Large-Signal dc Analysis: characteristics of an npn BJT
 Large-Signal dc Analysis
Procedure: (1) select the operation mode of the BJT
(2) use selected model for the device to solve the circuit
and determine IC, IB, VBE, and VCE
(3) check to see if the solution satisfies the constrains for
the region, if so the analysis is done
(4) if not, assume operation in a different region and
repeat until a valid solution is found

This procedure is very important in the analysis and design

of the bias circuit for BJT amplifier.

The objective of the bias circuit is to place the operating point in

the active region.

Bias point – it is important to select IC, IB, VBE, and VCE

independent of the b and operation temperature.

Example 13.4, 13.5, 13.6

Large-Signal dc Analysis: Bias Circuit

From Example 13.6 VBB acts as a short

circuit for ac signals

Remember: that the Q point should be independent of the b

(stability issue)
VBB & VCC provide this stability, however this impractical solution
Other approach is necessary to solve this problem-resistor network
Large-Signal dc Analysis: Four-Resistor Bias Circuit
Solution of the bias problem: VB  RB I B  VBE  RE I E
I E  (b  1I B VBE  0.7V
1 3 VB  VBE
IB 
RB  (b  1RE

Thevenin
equivalent
2 4
Equivalent
circuit for
active-region
Input model

Output

RB  R1 R2 VB  VCC (R2 / (R1  R2  VCE  VCC  RC I C  RE I E

 Small-Signal Equivalent Circuit

iB  I BQ  ib (t ) 
Small signal equivalent circuit   vBEQ  vbe (t ) 
for BJT:  (1   I ES exp  
  VT 
  vbe (t ) 
 I BQ exp  
Thevenin   VT 
equivalent
exp( x)  1  x,
 vbe (t ) 
I BQ  ib (t )  I BQ 1  
 VT 
so

vbe (t ) vbe (t ) VT
ib (t )  I BQ  and r 
VT r I BQ
Common Emitter Amplifier

First perform DC analysis to find

small-signal equivalent
parameters at the operating point.

Find voltage gain:

Find input impedance:

Common Emitter Amplifier

Find current gain

Find power gain:

Find output impedance:

Problem 13.13:
Suppose that a certain npn transistor has VBE = 0.7V for IE =10mA.
Compute VBE for IE = 1mA.

Repeat for IE = 1µA. Assume that VT = 26mV.

  VBE   V 
I E = I ES  exp   - 1  I ESexp  BE 

  VT    VT 
 0.7   V 
10mA = I ESexp   and 1mA = I ESexp  BE 
 0.026   0.026 
 0.7 - VBE 
divide both sides  10 = exp  
 0.026 
 0.026 * ln 10  0.7  VBE
VBE  0.7  0.026 * ln 10  0.64V 
Problem 13.14:
Consider the circuit shown in Figure P13.14. Transistors Q1 and Q2 are
identical, both having IES = 10-14A and β = 100. Calculate VBE and IC2.
Assume that VT = 26mV for both transistors.

Hint: Both transistors are operating in the active region.

Because the transistors are identical and have identical values of VBE,
their collector currents are equal.

I B1  I B 2  I C  1mA & I C  bI B
2  1mA
 I C   1  1mA  I C   0.98mA
b  1.02
 1
I E  1   I C  0.99mA
 b
 VBE 
sin ce I E  I ES exp   we have
 VT 
VBE  VT ln
IE
I ES
( 
 0.026 * ln 0.99 *1011  0.658V
Problem 13.50:
The transistors shown in Figure P13.50 operate in active region and
have β = 100, VBE=0.7V. Determine IC and VCE for each transistor.

14.3
I1
I1   10 A I C1  bI1  1mA
1.43M
(15  (I E 2 *1k  0.7   I  I E 2
b 1
C1
IE2 10k
VBE 14.3 I E 2 IE2
  1mA 
10k 10 101
 1 1
0.43mA  I E 2 *   
 101 10 
I E 2  3.9126mA  I C 2  0.99 I E 2  3.8735mA
VCE 2  15  1k * (I C 2  I E 2   15  1.99k * I E 2  7.213V
 I 
VCE1  15  10k * 1mA  C 2   4.6126V
 b 
 Problem 13.52:
Analyze the circuit of Figure P13.52 to determine IC and VCE.

I  I1  I E I C  bI B
I
I1 
(0.7  15V  0.1047 mA I E  (b  1I B
150 K
IC
(I1  I B * 47k  0.7  I * 4.7k  15V
I1 IB I1 * 47 k  I B * 47 k  0.7  I1 * 4.7 k  (b  1* I B * 4.7 k  15V
IE I1 * (47 k  4.7 k   15  0.7  I B * (47 k  201* 4.7 k 
14.3  0.1047 mA * 51.7 k 14.3  5.413
IB    9.0 A
47 k  944.7 k 991.7 k
I C  b I B  1.8mA
VCE  VBE  47 k * (I1  I B   0.7  47 k * 0.1137 mA  6.04V
Problem 13.45:
Analyze the circuits shown in Figure P13.45 to determine I and V. For
all transistors, assume that β = 100 and |VBE| = 0.7V in both the active
and saturation regions. Repeat for β = 300.

(a) for b  100

VBE  0.7  VB  9.3V
9.3
IB   23.8A
390k
I C  bI B  2.38mA  V  I C * 2.2k  5.236 V
for b  300
I C  7.15mA  V  I C * 2.2k  15.73V (Incorrect 
9 .8
Since Vmax  9.8V  I C max   4.43mA
2.2k
I max 4.42mA
 b max    187.2
IB 23.8A
Problem 13.45: Contd.
(d) For b  100
14.3
I B1   0.9533A I C1  bI B1  95.33A  I B 2
15M
I  I C 2  I B 2 * b  9.533mA  V  I *1k  9.533 V

For b  300, I B2  286A  I C 2  I B 2 * b  85.8mA

( would give V  85.8V , Incorrect)

I C 2  b 2 I B1 and since Vmax  14.8V I max  14.8mA  I C 2 max

I C 2 max 14.8mA
b max    124.5
I B1 0.953A
Problem 13.67:
Consider the emitter-follower amplifier of Figure P13.67 . Draw the dc
circuit and find ICQ. Next, determine the value of rπ. Then, calculate
midband values for Av, Avoc, Zin, Ai, G and Z0.

I1

DC Analysis
I1 *10k  (I1  I BE *10k  15 V  I1 * 20k  I B *10k  15 V
15  I1 *10k  0.7  (1  b * I B *1k  I1 *10k  I B *101k  14.3 V
multiply 2nd equation by 2 and subtract the first one

I B * (202k  10k   28.6  15

13.6
IB   64.2A
212k
I CQ  I B * b  6.42mA
BJTs – Practical Aspects

npn
 V
I
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