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Advancing Innovation in Materials Science, Technology and

Applications for Sustainable Future


TOPIC:
Interfacial Reaction Between Sn and Cu-Ti Alloy (C1990HP)
REPORTER:
Andromeda Dwi Laksono
ADVISOR:
Prof. Yee-wen Yen
AFFILIATION:
Department of Material Science and Engineering
National Taiwan University of Science and Technology
Email: m10404813@mail.ntust.edu.tw
Date: Tuesday, October 31th, 2017
1 Introduction
 Soldering Technology
 C1990HP
 Interfacial Reaction
2 Experimental Method
3 Result and Discussion
4 Summary
5 Question & Answer

2
Soldering
The role of solder is essential in electronic packaging.
 Electrical, thermal, and mechanical linkages
Sn-Pb alloys have been widely used because
 Low melting temperature & low cost.
 Pb is toxic Sn-Pb solder
 They are replaced by lead-free solders
Sn-Au
Sn-Ag-Cu
Good wettability
Melting point: 231.9oC
Sn-Bi

Sn
Lower
temp. Reliable
Reasonable cost
Sn-Cu Oxidation resistance
Sn-Zn 3
Sn-Ag
Motivation
Heat
solder solder solder
Applied
Supersaturated layer IMC

substrate substrate substrate

 During soldering, interfacial reactions occur and intermetallic


compounds (IMCs) are formed in the surface.
 A thin, continuous, and uniform IMC layer is an essential
requirement for good bonding.

4
Background
There is no information regarding
interfacial reactions between
Ti Cu-Ti Cu-Ti
Cu
alloys and lead-free solders

Table 1. EPMA results of C1990HP

Instrument Cu Ti Fe

Wt.% 96.733 3.281 0.0025

C1990HP At.% 95.691 4.304 0.00265

(Hyper Titanium Copper)

5
In this study
Contains
react with
Ti C1990HP Sn

Effect???

Interfacial reaction Sn/C1990HP

6
To vacuum pump

Sn 240, 255, 270oC


for 60-240 min

Sealed
Solder balls here

C1990HP

Solder
C1990HP substrate
Morphology Composition Structure
Analysis
OM SEM EDS EPMA XRD

7
Sn/C1990 HP Interfacial Reaction

240oC Sn

Cu6Sn5
1h

IMC
C1990HP

Cu-43.58 at%Sn-0.32 at%Ti

8
Sn/C1990 HP Interfacial Reaction
(a) Sn (b) Sn (c) Sn

240 oC Cu6Sn5 Cu6Sn5 Cu6Sn5

74 µm 103 µm 139 µm

C1990HP C1990HP C1990HP


(d) (e) (f)
Sn Sn Sn
255 oC

Cu6Sn5 Cu6Sn5 Cu6Sn5


82 µm 120 µm 190 µm
C1990HP C1990HP
C1990HP
(g) (h) (i)
Sn Sn Sn
270 oC

Cu6Sn5 Cu6Sn5 Cu6Sn5


206 µm
88 µm 123 µm
C1990HP C1990HP C1990HP
1h 2h 4h 200mm

 Increasing reflow time and temperature  IMC & spalling

9
Electron Probe Micro Analyzer (EPMA)

10
Ti2Sn3 Phase

Ti2Sn3
Cu6Sn5

Cu6Sn5

11
Phase Equilibria

Reaction Path

L/(L+Cu6Sn5+T
i2Sn3)/Cu6Sn5/
C1990HP

12
o
270 C for 1h Cu6Sn5

Sn
Sn
: Ti2Sn3

 
 TABLE I. Evolution of IMCs in the liquid/solid

Cu
reactions in Sn/C1990HP couples for various reaction

Sn

Sn

Sn
Sn
times
o
255 C for 1h Reaction time (h)
Temp (oC)
1h 2h 4h
Intensity (a.u.)

Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3


240 (spread to (spread to (spread to
Sn

 solder) solder) solder)


Sn
Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3
Cu


Sn
Sn

Sn
 255 (spread to (spread to (spread to
Sn
solder) solder) solder)
Sn

o
240 C for 1h
Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3 Cu6Sn5+Ti2Sn3
Sn

270 (spread to (spread to (spread to


solder) solder) solder)


Cu

 
 
Sn

20 30 40 50 60 70 80
2(degree)

FIGURE 1. XRD analysis of the interfaces between Sn and


13
C1990HP substrates in different temperatures
Comparison with Cu substrate reaction
(a) Sn Sn/C1990HP  Cu6Sn5
Cu3Sn

Sn
: Ti2Sn3

Cu6Sn5 

Sn Cu

Sn Sn
Intensity (a.u.)

Sn

Sn
 

Sn
C1990HP
Sn/Cu 
(b) Sn

Cu6Sn5 
  

SnCu
Cu3Sn

Sn

Cu 20 30 40 50 60 70 80

2(degree)
FIGURE 2. Comparison of BEI micrographs reflowed at 255 oC for 2h
between (a) Sn solder/C1990HP systems, (b) Sn solder/Cu systems 14
(a) (b)
Sn Cu6Sn5+Sn
Cu6Sn5
(b)

C1990HP

FIGURE 3. SEI micrographs of Sn solder/C1990HP systems reflowed (a) at 240oC for 1h, (b) Zoom-in
SEI micrograph of (a). Etching solution (93.0 CH3OH + 2.0 HCl + 5.0 HNO3 in vol.%) was used to
remove solder
Hexagonal Prism
15
The 2 key points

1. Ti content in the substrate increased the


thickness of Cu6Sn5 IMC at the interface.
2. There was no Cu3Sn with the added Ti in the
Cu substrate

16
Spalling Phenomena
The reasons

 The C1990HP tend to posses higher surface energy

 The Cu6Sn5 IMC layer was thick that may induce compressive stress.

Sn Sn

Reduce the surface Ripening compunds


energy Spalling

C1990HP C1990HP

17
1. The Cu6Sn5 and Ti2Sn3 phase was formed in the Sn/C1990HP
couples at 240 oC to 270 oC for various times.
2. Ti content in the substrate has the effect to increase the
thickness of Cu6Sn5 IMC at the interface and not forming
Cu3Sn IMC.
3. The spalling and IMC growth was marked with immersion
time and temperature to follow the grain ripening in
Sn/C1990HP interfacial reaction.

18
The End
Thank you for your listening!
The dissolution model is dominated by the grain boundary
diffusion. During heating, the atoms diffuse from the surface
into the specimen directly into the grains and, much faster,
along the grain boundary.

As the immersion time increases, the grooves remain among


the IMC grains at the solder/substrate interface. Those
grooves are the main channels through which Cu atoms to
dissolve into molten solders.
1. For the spalling case, Cu3Sn compound was appeared in
reaction couple with long time reaction. It would
eventually appear in solid-state aging at 160 C start from
500 h (Wang et al, 2009 in SAC0.03/Cu system).
2.Probably the initially formed Cu3Sn layer transformed
into a Cu6Sn5 layer at the beginning of reflow.
3. Probably the small amount of Ti substantially hindered
Cu3Sn growth during soldering but enhanced Cu6Sn5
growth such as Ho and Tsai studied that used small Ni
addition.
(Laurila et al, 2010). In those cases, if an excess amount of
the same alloying elements are used, there is potential risk
that the solder joint will lose reliability. The C1990HP
substrate had a composition of Cu-4.3 at% Ti based on
EPMA analysis, may indicating that excess addition of Ti
in C1990HP decreased adhesion at the Sn/C1990HP
interface, which could weaken a joint.
Composition Phase
Sn/C1990HP
- Cu6Sn5  The phase had a composition of 56.09 Cu, 43.58 Sn and 0.32 Ti (at.%)
- Ti2Sn3  Composition 21.87 Cu, 65.02 Sn and 13.11 Ti (at.%) composition

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