The process or result of oxidizing or

being oxidized

• To act as mask for diffusion of dopant into si substrate.

• To provide surface passivation.con.

• To isolate one device from other in integrated circuit

• To act as gate in mos-ics and mosfets.

• To provide electrical isolation of multilevel metallization

system.
Thermal Oxidation
Thermal oxidation is a way to produce
a thin layer of oxide (usually silicon
dioxide) on the surface of a wafer. The
technique forces an oxidizing agent to
diffuse into the wafer at high
temperature and react with it.

Figure:1 oxidation process

 Growth mechanism and kinetics
The thermal oxidation of Si in oxygen or water vapour may take
place in following fashion.

Cg→Concentration of oxidizing species in gas.

Cs→Concentration of next to gas oxide interface.
Co→Concentration at the outer surface.
Ci→Concentration at the inner surface.
C*→Equilibrium Concentration of oxidizing
species.

F1= Hg(Cg-Cs) = Hg (C*-Co)

F2=D(Co-Ci)/x
F3=KsCi
 Growth techniques of oxide layer
• Dry oxidation-In this oxidation the oxidant used is oxygen
Si (solid) + O2 (vapour) --> SiO2 (solid)
• Wet oxidation-In this process steam is used as an oxidant. This method is used to produce
a thicker oxide 2,000-24,000Å, this thick oxide is usually called "field oxide" and it is
found in areas on the device where high dielectric strength is needed
Si (solid) + 2H2O (vapour) --> SiO2 (solid) + 2H2 (vapour

Oxygen atoms combined with Silicon Silicon Dioxide thick film growth process
atoms to form SiO2 at the Silicon
interface (picture taken with an atomic
force microscope
Calculation of rate of oxide growth

A=2D[1/ks+1/h
B=2DC*/N1

do/A/2=[1+t+ɽ/A2/4B]1/2

Limiting cases
•Long oxidation do2=BT
•Short oxidation do =B/A(t+ɽ)
High pressure oxidation

Plasma oxidation -Plasma electrolytic oxidation (PEO),

also known as is an electrochemical surface treatment
process for generating oxide coatings on metals.

Si +2H+2H o=sio2+H2+2H+
2

silicon Oxygen plasma

 Oxide Charges
These are present in the transition region exist at the interface of
Si-SiO2.These are include due to structural defects related to
oxidation process ,metallic impurities, or bond breaking processes.
Summarizing the Process
Oxidation Process Video…..
Thank
you