• The ground-state sub-band energy level always lies above the
conduction band edge. • The energy difference between the conduction band edge and ground- state sub-band energy levels increases as we decrease the film thickness. • This difference pushes the Fermi level up and brings it closer to the ground-state energy. • This indicates that for the same bias condition, the quantum mechanical inversion charge density Qiqm will be less than the classical inversion charge density Qcli . As a result, the quantum mechanical threshold voltage of the device becomes higher than the conventional threshold value. This geometrical confinement becomes more and more significant with reduction in the film thickness. It is well known from quantum mechanics Ids-Vgs comparison with and without the quantum mechanical effect