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The unipolar transistor is known as FIELD EFFECT TRANSISTOR. It depends on only majority charge carriers. In FET, the current is controlled by electric field. N channel FET consists of bar of n type material with two terminals at its ends called source and Drain.
The unipolar transistor is known as FIELD EFFECT TRANSISTOR. It depends on only majority charge carriers. In FET, the current is controlled by electric field. N channel FET consists of bar of n type material with two terminals at its ends called source and Drain.
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The unipolar transistor is known as FIELD EFFECT TRANSISTOR. It depends on only majority charge carriers. In FET, the current is controlled by electric field. N channel FET consists of bar of n type material with two terminals at its ends called source and Drain.
Hak Cipta:
Attribution Non-Commercial (BY-NC)
Format Tersedia
Unduh sebagai PPT, PDF, TXT atau baca online dari Scribd
transistor. It depends on only majority charge carriers. In FET, The current is controlled by electric field. There are two main classes of field effect transistor. 1 Junction Field Effect Transistor. 2 The Insulated Gate Field Effect Transistor. It is also called metal oxide semiconductor Field Effect Transistor. WHY IT IS CALLED FIELD EFFECT TRANSISTOR?
The drain current through the channel depends
on the electric field extend into the channel.So it is called Field Effect Transistor. Working In n channel FET, the main current is composed of electrons as they are majority charge carriers in n type, the n layer provides a path to the main current. The main current is controlled by applying a reverse bias to both the pn junctions. When drain is made +ve w.r.t source, the majority carriers in the bar starts flowing from source to drain. This flow of electrons maintain the drain current. When the junction b/w the gate and source is reverse biased, the width of depletion region increases on both sides of the channel and reduces the width of the channel. So the drain current decreases. If the reverse bias b/w the gate and source is further increased, the width of the depletion region further increased and the channel becomes narrow at the drain end. At sufficient large reverse bias the depletion region will extend into the channel and meet. This pinches of all the current flow. The gate source voltage at which pinch off occurs is called pinch off voltage. Then constant Id flow through the channel. Applications of FET: FET is a linear device, So it can be used in TV receivers. Due to high input impedance, FET is used in electronic voltmeters. Due to a small size, It can be used in computer memories. It is also used in the tuners of radio. Characteristics of FET 1. Output or static drain characteristics:
The curves b/w drain source voltage
and drain current at constant gate source voltage are called output characteristics of FET.
2. Transfer or mutual characteristics:
The curves b/w gate source voltage and
drain current at constant drain source voltage are called transfer characteristics of FET.