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Analytical Quantum

Model for Short-Channel


Gate-All-Around MOSFETs

By:
Sugandha Agarwal Supervisor:
(06596402812) Sonam Rewari
Akansha Goyal
(07396402812)
INTRODUCTION
• Our project presents an analytical model of short-channel
cylindrical Gate All Around (GAA) MOSFET for
quantum –confinement effects under the subthreshold
region.
• It will predict the effects of doping concentration and
short channel effects on the quantum-confinement effects.
• To achieve the above stated motive we have used
Schrodinger equation and 2-D Poission equation to find
the expression for eigenvalues of functions and energy .
• Values calculated from the above derived expressions will
be verified by the simulation result.
QUANTUM EFFECTS
• When electrons are confined in a space comparable in size to
the de Broglie wavelength, the quantum size effect becomes
very relevant.
• In MOSFETs as the channel length decreases, quantum effects
become more significant.
• As the gate oxide thickness is scaled down, the substrate
doping level continues to increase, leading to very large
electric fields at the Si–SiO2 interface.
• This strong electric field gives rise in the inversion layer to a
potential well sufficiently narrow to cause a significant
quantization in the motion of carriers perpendicular to the
interface. This give rise to quantum effects in GAA MOSFET.
• Quantum effects are considered to be independent of carrier
flow direction i.e channel length direction.
Schematic sketch of the GAA structure. The origin point (r = 0, y
= 0) is defined at the center of the channel/source
junction.
ANALYTICAL MATHEMATICAL
EXPRESSIONS
• The Schrödinger equation in the cylindrical coordinates is:

[1]

• Conduction band edge Ec(r,Ө)is obtained from the channel potential


solution of poisson’s equation. The channel potential solution Ф(r,y) for
GAA MOSFETs is
[2]
[3]

[4]
• To simplify the schrodinger equation, the Bessel Function based φ2 is further
reduced to parabolic function and Ec can be expressed as Ec = α · r2 + β
where
By using the seperation of variables technique, the solution to the
Schrodinger equation is expressed as Ψn,l(r, θ) = Rn(r) · exp(i · l · θ)
where Rn(r) is the solution of the given equation:

[5]

with the coefficients ci’s being determined by the recurrence


relationship

[6 ]

The expression for the eigenenergy En is derived from the above


expression.
WORK DONE
• We have derived the mathematical expression for the eigenenergy En .

• Equations till equation 4 have already been derived in the previous work[3].

• We have derived the expression for Rn(r) using the equation (5) .

• We have done simulation of conventional model of GAA cylindrical MOSFET


using Sivaco Atlas 3D Device simulator. Result obtained is shown in upcoming
slides.

• We have done simulation of quantum model of GAA cylindrical MOSFET using


Sivaco Atlas 3D Device simulator. Result obtained is shown in upcoming slides.

• In the simulation of the quantum model we have observed the relation between
potential , electric field , current and channel length.

• Then we have studied the analytical quantum model using Mathcad software .

• Then we have verified the results obtained from simulations and mathcad results.
RESULTS OF SIMULATION OF
CONVENTIONAL MODEL OF GAA
MOSFET
RESULT OF SIMULATIONS OF
QUANTUM MODEL OF GAA
MOSFET
CROSS-SECTIONAL VIEW OF GAA
CYLINDRICAL MOSFET

PARAMETERS MOSFET
CHANNEL LENGTH (nm) 16
CHANNEL DOPING (/cm3) 1*1015
SILICON OXIDE THICKNESS (nm) 1
SILICON THICKNESS (nm) 10
GATE WORK FUNCTION (eV) 5.56
RESULTS OF SIMULATIONS

POTENTIAL VERSUS CHANNEL LENGTH


ELECTRIC FIELD VERSUS CHANNEL LENGTH
CURRENT VERSUS CHANNEL LENGTH
VERIFICATION OF RESULTS
OBTAINED FROM SIMULATION
AND MATHCAD
1.COMPARISON BETWEEN SIMULATED AND ANALYTICAL RESULTS FOR POTENTIAL
VERSUS CHANNEL LENGTH
2. COMPARISON BETWEEN SIMULATED AND ANALYTICAL RESULTS FOR ELECTRIC FIELD
VERSUS CHANNEL LENGTH.
3. COMPARISON BETWEEN SIMULATED AND ANALYTICAL RESULTS OF
THRESHOLD CURRENT
CONCLUSIONS

We have proposed an analytical model for quantum confinement effects in GAA


MOSFETs under the subthreshold region. The Schrödinger equation is solved
considering the bended potential well of parabolic form. Our analytical model
accurately predicts the impact of short-channel effects on the eigenenergy and
eigenfunction of GAA devices. This short channel quantum-confinement model is
crucial to the ultrascaled GAA MOSFETs design.
REFERENCES
1. Yu-Sheng Wu, Pin Su, "Analytical Quantum-Confinement
Model for Short-Channel Gate-All-Around MOSFETs Under
Subthreshold Region" , IEEE Electron Device Lett., vol. 56
, no. 11 , pp.2720 -2725 , 2009
2. D. G. Zill and M. R. Cullen , Differential Equations With
Boundary Value Problems , 2001 :Brooks/Cole
3. Y. S. Wu and P. Su , "Sensitivity of gate-all-around nanowire
MOSFETs to process variationsA comparison with multigate
MOSFETs" , IEEE Trans. Electron Devices , vol. 55 , no. 11
, pp.3042 -3047 , 2008
4. D. K. Cheng , Field and Wave Electromagnetics , 1992
:Addison-Wesley
THANKING YOU

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