By:
Sugandha Agarwal Supervisor:
(06596402812) Sonam Rewari
Akansha Goyal
(07396402812)
INTRODUCTION
• Our project presents an analytical model of short-channel
cylindrical Gate All Around (GAA) MOSFET for
quantum –confinement effects under the subthreshold
region.
• It will predict the effects of doping concentration and
short channel effects on the quantum-confinement effects.
• To achieve the above stated motive we have used
Schrodinger equation and 2-D Poission equation to find
the expression for eigenvalues of functions and energy .
• Values calculated from the above derived expressions will
be verified by the simulation result.
QUANTUM EFFECTS
• When electrons are confined in a space comparable in size to
the de Broglie wavelength, the quantum size effect becomes
very relevant.
• In MOSFETs as the channel length decreases, quantum effects
become more significant.
• As the gate oxide thickness is scaled down, the substrate
doping level continues to increase, leading to very large
electric fields at the Si–SiO2 interface.
• This strong electric field gives rise in the inversion layer to a
potential well sufficiently narrow to cause a significant
quantization in the motion of carriers perpendicular to the
interface. This give rise to quantum effects in GAA MOSFET.
• Quantum effects are considered to be independent of carrier
flow direction i.e channel length direction.
Schematic sketch of the GAA structure. The origin point (r = 0, y
= 0) is defined at the center of the channel/source
junction.
ANALYTICAL MATHEMATICAL
EXPRESSIONS
• The Schrödinger equation in the cylindrical coordinates is:
[1]
[4]
• To simplify the schrodinger equation, the Bessel Function based φ2 is further
reduced to parabolic function and Ec can be expressed as Ec = α · r2 + β
where
By using the seperation of variables technique, the solution to the
Schrodinger equation is expressed as Ψn,l(r, θ) = Rn(r) · exp(i · l · θ)
where Rn(r) is the solution of the given equation:
[5]
[6 ]
• Equations till equation 4 have already been derived in the previous work[3].
• We have derived the expression for Rn(r) using the equation (5) .
• In the simulation of the quantum model we have observed the relation between
potential , electric field , current and channel length.
• Then we have studied the analytical quantum model using Mathcad software .
• Then we have verified the results obtained from simulations and mathcad results.
RESULTS OF SIMULATION OF
CONVENTIONAL MODEL OF GAA
MOSFET
RESULT OF SIMULATIONS OF
QUANTUM MODEL OF GAA
MOSFET
CROSS-SECTIONAL VIEW OF GAA
CYLINDRICAL MOSFET
PARAMETERS MOSFET
CHANNEL LENGTH (nm) 16
CHANNEL DOPING (/cm3) 1*1015
SILICON OXIDE THICKNESS (nm) 1
SILICON THICKNESS (nm) 10
GATE WORK FUNCTION (eV) 5.56
RESULTS OF SIMULATIONS