FET Amplifier Circuits Analysis

• FET amplifier parameter gm

• CS amplifiers
• CS with RS amplifiers
• SF amplifiers
• Bootstrap amplifier
• CG amplifiers

1
Types of FETV amplifiers (MOSFET) VDD
DD

RD RD
vo vo
Ri C2 C1 Ri C2 C1

RL RL
vi RG vi RG
RS CS RS

(a) Common Source (CS) (b) Common Source (CS) with RS

High AV and high Ri Low AV and high Ri
Voltage amplifications Stability applications

VDD VDD
RD
vo
Ri C2 CG C1
C1 vo
RL
vi RG RL RG C2 Ri vi
RS RS

(c) Source Follower (SF) (d) Common Gate (CG)

Very low Ro and high Ri Very low Ri and high AV
Buffer applications High Frequency applications
EE2603-02
EE2603-01
Electronic Circuit Analysis 2
FET amplifier parameter gm
MOSFET-self-bias amplifier VDD

RD
ID
IDSS VP gm
IG=0 +
VGS -
RG +
RS IDRS
-
V
GS I
DR
S(self
bias
)or
V V
GS GI
DRS(voltage
divider
bias
)(
1)
R1 (
Where
V V
G DD all
components
are
given
in
the
circuit
)
R
1R2
2 2
 V 
GS   IR
DS
I I
D DSS
1   I 
DSS1  
(2)
 V  V 
 P  P 
Substitute
given
I ,V
DSS P,R
S in
(2)above
and
getquadratic
equation
in
ID
Solve
IDand
Substitute
I
D in
(1
)and
get
VGS (
3)
2I  V
DSS 
GS
Find
gm 
1  for
FET equivalent
circuit
calculatio
ns
V  V 
P  P EE2603-01
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Electronic Circuit Analysis 3
FET amplifier parameter gm
MOSFET-voltage divider-bias amplifier
VDD
RD
R1
ID
VG
IDSS VP gm
+ +
VGS
R2 - +
RS ID R S
- -

V
GSV
GI
DRS(voltage
divider
bias
)(
1)
R1 (
Where
V
GVDD all
components
are
given
in
the
circuit
)
RR
1 2
2 2
 V   V IR
I
DI 1 GS
DSS  I 1 G DS 
DSS (
2 )
 V  V 
 P  P 
Substitute
given
I
DSS,V
P,R
S in
(2)above
and
get
quadratic
equation
in
ID
Solve
IDand
Substitute
I
D in
(1
)and
get
VGS (
3)
2I  V
DSS 
GS
Find
gm 
1  for FET equivalent
circuit
calculatio
ns
V  V 
P  P EE2603-01
EE2603-02
Electronic Circuit Analysis 4
 VDD=20V
RD
Example: Find gm of the given FET amplifier ID
IDSS=8mA
VP=8V

RG=1MW
RS=2.4kW

Vp 8
V,IDSS
8mA
,RS 2.4kbut
V
GSIDRS2.4ID
2 2
 V   2.4ID 8
 1 GS 8
ID IDSS
 V  
1 
  82.4ID2
 P   8  64
2 2
8ID 64
5.76
ID 38
.4ID 5.76
ID 46
.4ID64
0
46.4 2153 1474
.6 46.426.04
ID   1.77 or6.29
11.52 11
.52
VGS1.77mA 2.4k4 Vor6
.25 .29mA2.4k15.1
V
But
VGS15
.1
Vbeyond
VP 8
Vneglected
2IDSS
 V  28 4 .25

gm 1 GS 1 0.94
mS
V  V  8  8 
P  P 

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Electronic Circuit Analysis 5
 VDD=20V
R 1= RD=4.7kW
Example: Find gm of the given FET amplifier 2MW ID
VG IDSS=8mA
+ + VP=-8V
VGS
R 2= -
100kW RS=2.4kW
-
V
p 8V,IDSS
8mA
,RS 2.4kbut
VGSV
G IDRS0.95
2.4ID
20100
k
whereV
G 0.95
V
100
k2000k
2 2
 V   0.95
2.4ID 8
1 GS 8
ID IDSS
  1 
  80.952.4ID2
 V
P   8  64
2 2
8ID 80
.15.76
ID 42
.96
ID5.76
ID 50
.96
ID80
.10
50  2597
.96 184550 .96
27 .41
ID   2.04
mA or6.8mA
11.52 11
.52
V
GS0.952.04mA2.4k 3.9Vor0.956.8mA2.4k 15
.37
V
But
VGS15
.37 VP 8Vitisneglected
Visbeyond
Correct
answer
isVGS3.9V
2IDSS
 V  28 3.9
gm  1 GS  1 1.025 mS
V  V  8  8 
P  P 
EE2603-01
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Electronic Circuit Analysis 6
CS amplifier analysis
VDD VDD
RD RD
R1
Vo Vo
Vi Vi
RL RL
RG R2
RS CS RS CS

MOSFET-self-bias CS amplifier MOSFET-voltage divider-bias CS amplifier

Ri iin ig=0 D
G vo
vg
v
o m

R
gs
D 
//
R
L
gmvgs
iL
A

v  g
(
R
m
D//
R
)
L vgs
v
in vgs RG S
vin RD RL
vi
Ro
Rin
Rin = RG Ro = RD
EE2603-02
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Electronic Circuit Analysis 7
 CS with RS amplifier analysis
VDD VDD
RD RD
R1
Vo Vo
Vi Vi
RL RL
RG R2
RS RS

JFET-self-bias CSwithRS amplifier MOSFET-voltage divider-bias CS withRS amplifier

Ri iin ig=0 G D
gmvgs vo
vgs iL
RG S
vin RD RL
v
o
gv
m 

gsR
D//
RL
gm(
RD//
R)v
L
A
v   i
v
in v 
gsg
mv R
gs
S 1gR
mS RS Ro
(
R //
R) Rin
 D Lif
1 g

mR
S
R
S approximate Rin = RG R o = RD
EE2603-02
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Electronic Circuit Analysis 8
 SF amplifier analysis
VDD VDD

R1
Vi Vi
Vo
RG
RS Vo
RL R2
RS RL

JFET-self-bias SF amplifier MOSFET-v.divider-bias SF amplifier

Ri iin ig=0 D
G
  g gmvgs
vo
gv
m
gsRS//
R
L (
mR
S//
R)
L
A
   vgs
v
v v
in g

gsv
m
gs
RS//
R
L1
g
m
RS//
R
L S
vin RG vo
1
if
1
g
m
RS 
//
R
L vi
RS RL
Vv
and
gs
RS Ig

RSv
mR

gs
oR
S 
//
V/
RSI
RS
R
S
//
v/g
v
gs
m
gsR
//
1
/g
S m Rin Ro
Rin = RG Ro = RS//1/gm
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Electronic Circuit Analysis 9
 in o vv
Example: Find
R,
R
o
in ,
A
vof
the
folowi
SF
ampl
.
i
inv
in

Vp 8
V,IDSS
8mA
,RS 2.4kbut
V
GSIDRS2.4ID VDD
2 2
 V   2.4ID 8
 1 GS 8
ID IDSS
 V  
1 
  82.4ID2
 P   8  64 Vin IDSS=8mA
2 2 VP=8V
8ID 64
5.76
ID 38
.4ID 5.76
ID 46
.4ID64
0
46.4 2153 1474.6 46.426.04 Vo
ID   1.77 or6.29 RG=1M RS=2.4k
11
.52 11
.52 RL=2.4k
VGS1.77mA 2.4k4.25Vor6.29mA2.4k15.1
VR
in
ButVGS 15.1
Vbeyond VP  8
Vneglected Ro
2IDSS
 V  28 4 .25

gm 1 GS 1 0.94
mS
V  V  8  8 
P  P 

1
R

oR
S
//
1
/g

m2
.
4k
//k2
.
4
k
//
1
.
06
k0
.
74
k
W
0
.
94
R
inRG1M
W
v
og
m(
R
S//
R)0
L .
94
(
2.
4
k//
2
.
4
k)1
.
13
A
   0
.
53
v
v1
g

in
R
mS
//
R
L1
0
.
94
(2
.
4k
//
2
.
4k
)2
.
13

EE2603-02
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Electronic Circuit Analysis 10
Bootstrap Amplifier analysis
Miller’s Theorem
I1 I2 I1 I2
Z
V1 V2 V1 ZM1 ZM2 V2

Rin
V
1 V1Z
Z
M1 
V
1V
2 V
2V
1 I
1 V V
12
I
1 and
I
2
Z Z Z Z
  Input
resis
tan
ce
V2 1A
1 V V
1

V2 V
2Z Z
Z
M2  
I
2V V V
2 1 11V2
Z
 resis
tan
ce
atoutput
ter
min
al
11
AV

V2
Where
A
V
V1

EE2603-02
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Electronic Circuit Analysis 11
Miller’s Theorem applied to Bootstrap amplifier

I1 I2 I1 I2
Z
V1 V2 V1 ZM1 ZM2 V2

Rin VDD
VDD
RD
RD Vo
Vo Vin
Vin
Vo1
Vo1 RL
RL RS1
RG RS1 RM1 Vo2

Vo2 Rin
Rin RS2 RM2
RS2

Miller’s resistor RG R
R
G R R
  G
is connected R
inR1
M
S3 M2
11
1AV A V
between Vin and Vo2

EE2603-02
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Electronic Circuit Analysis 12
Example: Find Rin of the following Bootstrap CS amplifier
VDD
1. Find gm
RD
Vp 8V,IDSS
8mA
,RS 1kbut
VGSIDRS11ID Vo3
2 2
Vin
 VGS  ID 8
1
ID IDSS

 8
 1 
  8ID2
 VP   8  64 Vo2
2 2 RG
8ID 64ID ID ID
16 ID 640
24 300kW 1kW RS1 RL
Vo1
24 576 256 2417 .89
ID   3.05or20.945
11.52 2 Rin 1.2kW RS2
VGS3.051k 3.05
Vor20.9mA1k 20.9V
ButVGS20
.9Visbeyond
VP 8Vneglected
2IDSS
 VGS 28 3.05
gm  1  1 1.24
mS
VP 
 V 
P  8  8 

2. Find Vo1/Vin=AV1 Vo3

A
v g
1 m
o
V
R .
2 1
gs
S mS
24(
1.
k
2).
1 
488
.
Vin gmVgs

v
1
v

Vg
V

gs
inm
RR

gs
S1


S
2
1
1.mS
24(
.
2
2k
)

.
3



0
399
728
Vgs RL
RG
300kW 1kW RS1 RD
3. Find Rin = RM1 Vgs Vo1
1.2kW R R
R
G k
W
300 in S2

R
R

in
M
1  k
W(
Rconnec
499
G from
to
V
)
in
o
1
A

11
V
1.

0
399
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Electronic Circuit Analysis 13
CG Amplifier

VDD VDD
RD RD
VO R1 VO

RL RL
C1
Vin C1 Vin
RG RS R2 RS
Rin Rin

MOSFET-self-bias CG amplifier MOSFET-voltage divider-bias CG amplifier

EE2603-02
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Electronic Circuit Analysis 14
CG amplifier analysis

VDD
RD
R1 VO

V
o
g
mv
gs
RD 
//
R
Lbut
V

invgs RL
V g
v
m 
RD

gs 
//
RL
A

V
o
 g

R
mD 
//
R
L C1 Vin
V
in v
gs R2 RS
Rin

V
inv
 and
gs Ig
mvgs
G D
V
in 

 vgs  + +
R
inR
S//
 I  R
S//
 gv  Gate
   mgs
 capacitor vgs gmvgs RG RL
short - S
1  vo
R
S//
 g + I
 m RS vin Rin
- -

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Electronic Circuit Analysis 15