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This document describes an experiment to determine the band gap of a Germanium semiconductor diode. The experiment involves measuring the reverse saturation current (Ir) of the diode at different temperatures and plotting log(Ir/T2) vs 1/T. From the slope of the line of best fit, the band gap (Eg) of Germanium is calculated to be 0.67eV. The band gap represents the minimum energy required for an electron to jump from the valence band to the conduction band in the semiconductor.
This document describes an experiment to determine the band gap of a Germanium semiconductor diode. The experiment involves measuring the reverse saturation current (Ir) of the diode at different temperatures and plotting log(Ir/T2) vs 1/T. From the slope of the line of best fit, the band gap (Eg) of Germanium is calculated to be 0.67eV. The band gap represents the minimum energy required for an electron to jump from the valence band to the conduction band in the semiconductor.
This document describes an experiment to determine the band gap of a Germanium semiconductor diode. The experiment involves measuring the reverse saturation current (Ir) of the diode at different temperatures and plotting log(Ir/T2) vs 1/T. From the slope of the line of best fit, the band gap (Eg) of Germanium is calculated to be 0.67eV. The band gap represents the minimum energy required for an electron to jump from the valence band to the conduction band in the semiconductor.
PHYSICS PROJECT NAME NITISH ROLL NO 207 CLASS TYBSc. What is Energy Band and Types Of Bands ?
• A range of energies associated with the
quantum states of electrons in a crystalline solid.
• Types of Energy Bands
Conduction Band Valance Band To Determine the energy band gap of Germanium semi-conductor
Apparatus – Germanium semiconductor, DC power supply(0- 5V) ,microammeter, Digital Voltmeter, thermometer ,burner. FORMULA.
Is : reverse saturation current .
T : absolute temperature of diode K : Boltzmann constant A : constant THEORY In Germanium semiconductor Diode , the Ge diode is connected in reversed baised and there is low flow of current in diode . When the energy given to Germanium semiconductor The electron jumps from valance band to conduction band and current will produce . Giving more and more temperature the current will produce more . OBSERVATIONS Table no 1. t =Room temp. T1 = 35 T2= 40 T3=45 T4=50 T5=55 31 Vr Ir Vr Ir Vr Ir Vr Ir Vr Ir Vr Ir V um V um V um V um V um V um 0.1 3.0 0.1 4.3 0.1 6.9 0.1 11.2 0.1 16.0 0.1 23.8 0.2 3.1 0.2 4.3 0.2 6.9 0.2 11.5 0.2 16.9 0.2 25.4 0.4 3.2 0.4 4.5 0.4 7.0 0.4 11.5 0.4 17.1 0.4 25.7 0.6 3.2 0.6 4.5 0.6 7.0 0.6 11.5 0.6 17.3 0.6 25.9 0.8 3.2 0.8 4.5 0.8 7.1 0.8 11.5 0.8 17.4 0.8 26.6 1.0 3.2 1.0 4.5 1.0 7.2 1.0 11.6 1.0 17.5 1.0 27.2 2.0 3.3 2.0 4.6 2.0 7.4 2.0 11.7 2.0 17.6 2.0 27.2 3.0 3.4 3.0 4.7 3.0 7.6 3.0 11.8 3.0 17.9 3.0 27.3 4. 0 3.6 4 .0 4.8 4.0 7.8 4.0 11.9 4.0 18.2 4.0 27.3 5 .0 3.7 5.0 5.0 5.0 8.0 5.0 12.0 5.0 19.1 5.0 27.4 TABLE NO 2 . Obs. No t T= 273+t Is Is/t.t Log Is/t.t Log Is/t.t + 1/T 11 Degree c k Micro A A/k^2 1/k