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  • Flash Memory

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    Priyadarshini Sahoo
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    The document summarizes a technical seminar presentation about flash memory. It discusses that flash memory is a type of solid state, non-volatile memory that stores electrical charges rather than using magnetic media. It is lighter, more compact, energy efficient and less expensive than other storage options. The presentation covers how flash memory works using transistors, its block structure that requires erasing entire sections, and technologies like MLC that allow storing multiple bits per cell to increase storage capacity. Advantages include being noiseless and allowing faster access, while limitations include higher costs than DRAM and issues with multiple format standards. The document concludes that flash memory provides an alternative to battery-backed RAM or conventional DRAM memory.

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    The document summarizes a technical seminar presentation about flash memory. It discusses that flash memory is a type of solid state, non-volatile memory that stores electrical charges rather than using magnetic media. It is lighter, more compact, energy efficient and less expensive than other storage options. The presentation covers how flash memory works using transistors, its block structure that requires erasing entire sections, and technologies like MLC that allow storing multiple bits per cell to increase storage capacity. Advantages include being noiseless and allowing faster access, while limitations include higher costs than DRAM and issues with multiple format standards. The document concludes that flash memory provides an alternative to battery-backed RAM or conventional DRAM memory.

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    Attribution Non-Commercial (BY-NC)
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    123 tayangan12 halaman

    Flash Memory

    Diunggah oleh

    Priyadarshini Sahoo
    The document summarizes a technical seminar presentation about flash memory. It discusses that flash memory is a type of solid state, non-volatile memory that stores electrical charges rather than using magnetic media. It is lighter, more compact, energy efficient and less expensive than other storage options. The presentation covers how flash memory works using transistors, its block structure that requires erasing entire sections, and technologies like MLC that allow storing multiple bits per cell to increase storage capacity. Advantages include being noiseless and allowing faster access, while limitations include higher costs than DRAM and issues with multiple format standards. The document concludes that flash memory provides an alternative to battery-backed RAM or conventional DRAM memory.

    Hak Cipta:

    Attribution Non-Commercial (BY-NC)
    Unduh sebagai PPT, PDF, TXT atau baca online dari Scribd
    Tandai sebagai konten tidak pantas
    dari 12

    Technical Seminar Presentation-2004

    National Institute of Science & Technology

    Flash Memory
    By
    Arjun Sabat Roll No: EE 200113365

    Under the guidance of


    Mr. Gayadhar Panda
    Presented By: Arjun Sabat [EE200113365]
    Technical Seminar Presentation-2004

    INTRODUCTION
    National Institute of Science & Technology

    • Flash Memory is solid state non-volatile


    memory.
    • It stores electrical charges rather than
    magnetic media.
    • Flash memory is light,compact,energy
    efficient and less expensive.
    • it is a ideal storage medium for digital
    camera,smart card etc.

    Presented By: Arjun Sabat [EE200113365]


    [2]
    Technical Seminar Presentation-2004

    WHAT IS FLASH MEMORY?


    National Institute of Science & Technology

    • Flash memory is electronically erasable,


    electronically programmable, (generally)
    read-only memory.
    • From an embedded system designer’s
    perspective, the key difference between
    flash memory and EEPROM is that flash
    devices are block structured; that is, while
    flash memory locations are individually
    programmable, they are not individually
    erasable the way they are with EEPROM.
    Presented By: Arjun Sabat [EE200113365]
    [3]
    Technical Seminar Presentation-2004
    National Institute of Science & Technology

    • Flash memory is erased in sections


    whose sizes and locations in the chip are
    defined by the part’s manufacturer.
    • As a result, once a flash memory location
    is programmed, the entire section
    containing the location must be erased
    before that location can be programmed
    again.

    Presented By: Arjun Sabat [EE200113365]


    [4]
    Technical Seminar Presentation-2004

    HOW FLASH MEMORY WORKS


    National Institute of Science & Technology

    • Flash memory is a type of EEPROM chip.


    • Flash memory cell consists of two transistors
    and these transistors are separated by a thin
    oxide layer.
    • One transistor is called floating and other one
    is control gate.
    • A cell censor monitor the level of charge
    passing through floating gate. if the flow
    through the gate is greater than 50%of charge
    its value is ‘1’. If charge passing drops below
    50% threshold it’s value is ‘0’.
    Presented By: Arjun Sabat [EE200113365]
    [5]
    Technical Seminar Presentation-2004

    MLC TECHNOLOGY
    National Institute of Science & Technology

    • MLC stands for Multi Level Cell


    • MLC Technology allows storage multiple bits
    per memory cell by charging memory cell to
    different voltage level.
    • These significantly increase the number of
    bits stored per area.
    • It may store per cell or thee bits per cell.
    • It significantly decrease the cost per
    Megabyte.

    Presented By: Arjun Sabat [EE200113365]


    [6]
    Technical Seminar Presentation-2004

    HOW TO ERASE & WRITE TO FLASH?


    National Institute of Science & Technology

    • Flash memory is a type of EEPROM chip.


    It has a grid of columns and rows with a
    cell that has two transistors at each
    intersection. The two transistors are
    separated from each other by a thin oxide
    layer.
    • Programming algorithms specified to Flash
    controller is used to control Flash memory.

    Presented By: Arjun Sabat [EE200113365]


    [7]
    Technical Seminar Presentation-2004

    ADVANTAGES
    National Institute of Science & Technology

    • Flash memory is noise less.


    • It allows faster access.
    • It is smaller size and lighter.
    • It has no moving parts.

    Presented By: Arjun Sabat [EE200113365]


    [8]
    Technical Seminar Presentation-2004

    LIMITATIONS
    National Institute of Science & Technology

    • Flash memory costs five to ten times


    more than standard DRAM.
    • Another downside is the overabundance
    of formats.
    • Huge premium to pay power saving of
    flash memory.

    Presented By: Arjun Sabat [EE200113365]


    [9]
    Technical Seminar Presentation-2004

    FLASH APPLICATIONS
    National Institute of Science & Technology

    Nonvolatile storage needed but battery


    not desirable.

    In an application where long-term data


    storage is required but a battery is not
    desirable, flash provides an ideal alternative
    to battery-backed static RAM.

    Presented By: Arjun Sabat [EE200113365]


    [10]
    Technical Seminar Presentation-2004

    CONCLUSION
    National Institute of Science & Technology

    • Flash memory thus can provide an


    alternative to conventional DRAM memory.
    But it’s cost has to be decreased
    drastically to ensure that it replays the
    DRAM quickly.

    • By use of MLC technology the memory


    capacity of flash memory can be increased
    and thus the cost can be decreased.

    Presented By: Arjun Sabat [EE200113365]


    [11]
    Technical Seminar Presentation-2004
    National Institute of Science & Technology

    Thank
    You!
    Presented By: Arjun Sabat [EE200113365]
    [12]

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