PBS&T Advanced FIB Circuit Edit: Cu Line Deprocessing

Valery Ray(1), Tommy Chang(2), Chun Hung Chen(2), and Ching Chi Yang (2)

(1) (2)

PBS&T, MEO Engineering Co., Inc. USA vray@partbeamsystech.com Material Analysis Technology, Inc. Hsinchu, Taiwan
FIB User Group Meeting, ISTFA 2011 San Jose, CA USA

Outline

Cu Deprocessing Methods 65nm65nm-node Device, Thick Cu Line 50KV Process 40nm40nm-node Device, Thick Cu Line 30KV and Thin Cu Line 50KV Process Dummy Cu example
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Cu Deprocessing Difficulties

GAE is impossible, removal by sputtering Byproducts are solid, remain on sample Uneven etching due to poly-crystal Cu grain polystructure and Ga/Cu alloy formation Danger of over-etching underlying dielectric and overdestruction of the device
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Methods of Cu Deprocessing

Chemical protect dielectric from over-etch over Organic gases Proposed approach H2O Physical enforce smooth removal of Cu Selective etching Egg-carton pattern pre-etch Eggpre Low-energy Ga beam (smooth deprocessing of Lowdummy Cu is difficult, if not impossible)

Combined best results

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Methods of Cu Deprocessing
EggEgg-Carton Pattern
PrePre-etch depth is limited by beam diameter and independent of grain orientation

Etch rate is enhanced due to glancing angle of incidence, speeding up removal of tough grains
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50KV Process, 45nm-node Device 45nmRemove 3um M5 to Enable Edit on M4/M3

M5 M4 M3 M2 M1

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FIB User Group Meeting, ISTFA 2011 San Jose, CA USA

50KV Process, 45nm-node Device 45nmH2O + Standard Recipe

Device Destroyed

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50KV Process, 45nm-node Device 45nmH2O + GAE-like Recipe GAE-

Reduced over-etch overand smoother floor

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50KV Process, 45nm-node Device 45nmH2O GAE-like + Selective Etch GAE-

Smaller over-etch overFlat floor

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FIB User Group Meeting, ISTFA 2011 San Jose, CA USA

Final 50KV Process, 45nm-node Device 45nmH2O GAE-like + Selective Etch + Egg Carton GAE-

Minimal over-etch overFlat floor Edit on M4/M3 is possible

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FIB User Group Meeting, ISTFA 2011 San Jose, CA USA

Edit of 40nm-node Device 40nmRDL/8M/1P Connect M5 to M6 and cut M5

Connect points A and B

M6

Cut

M5

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Edit of 40nm-node Device 40nmCrossCross-Section

RDL

M8 M7
M5 M3 M2 M1
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M6 M4

Edit of 40nm-node Device 40nmPassivation Removed

V600CE @30KV

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Edit of 40nm-node Device 40nmRDL Removed

V600CE @30KV

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Edit of 40nm-node Device 40nmM8 Opened

V600CE @8KV

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Edit of 40nm-node Device 40nmM8 Etching @ 8KV

V600CE @8KV

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Edit of 40nm-node Device 40nmM8 removed, image @ 8KV

V600CE @8KV

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Edit of 40nm-node Device 40nmM8 removed

V600CE @30KV

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Edit of 40nm-node Device 40nmM6 Opened

V600CE @30KV

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Edit of 40nm-node Device 40nm-

M6 Removed

V600CE @30KV

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Edit of 40nm-node Device 40nm-

Dielectric

V600CE @30KV

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Edit of 40nm-node Device 40nm-

Via to M6

V-V @50KV

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Edit of 40nm-node Device 40nmVia to M5

V-V @50KV

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Edit of 40nm-node Device 40nmFilled Vias to M6 and M5

V-V @50KV

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Edit of 40nm-node Device 40nmM6 M5 Connected

V-V @50KV

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Edit of 40nm-node Device 40nmM5 open for cut

V-V @50KV

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Edit of 40nm-node Device 40nmM5 Cut

V-V @50KV

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Edit of 40nm-node Device 40nmArea Cleanup

V-V @50KV

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Edit of 40nm-node Device 40nmDielectric Coverage

V-V @50KV

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Summary

Demonstrated smooth and reliable deprocessing of Cu conductors in ICs down to 40nm node in existing FIB equipment with H2O precursor Best results were achieved by combination of chemical and physical methods of Cu removal 30KV FIB tools provided high throughput for bulk deprocessing of large Cu lines, but due to inadequacy of imaging capability and inefficiency of gas injection available on 30KV platform the 50KV VV FIB system was needed to cut thin ~100nm Cu lines without breaking through ~100nm interlayer dielectric
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Acknowledgements
Authors would like to thank management of Material Analysis Technology, Inc. for funding the development of low-cost Cu deprocessing lowtechnology and making this presentation possible Special thanks to Ma-Tek FA team for support Mawith cross-sectioning and material analysis crossduring process development work
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FIB User Group Meeting, ISTFA 2011 San Jose, CA USA