- Prefix meaning one millionth, 1/1,000,000 Prefix meaning one billionth, 1/1,000,000,000
Nano
The Powers of 10
10+0 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-13 10-14 10-15 10-16 10-17 10-18
1 Meter 10 Centimeters 1 Centimeters 1 Millimeter 100 Microns 10 Microns 1 Micron 1,000 Angstroms 100 Angstroms 1 Nanometer 1 Angstrom 10 Pico meters 1 Pico meter 100 Fermis 10 Fermis 1 Fermi 0.1 Fermis 0.01 Fermis 0.001 Fermis
1m
1 m
Bottom Up 1 nm
Biological cell Nucleus of a cell Wavelength of Visible Light Smallest feature in microelectronic chips Nanostructures & Quantum Devices Proteins (5-50 nm) Width of DNA (2 nm) Size of an atom (0.1 nm)
Perspective of Size
Water molecules 3 atoms Protein molecules thousands of atoms water molecule DNA molecules millions of atoms Nanowires, carbon nanotubes millions of atoms
Protein molecule
Electron tunneling
Pharmaceutical
Energy/ industry
Materials
Process-Technology
Microfabrication
Microfabrication is a top-down technique utilizing the following processes in sequential fashion (micrometer to milimeter range):
Film Deposition
Photolithography
Etching
Nanofabrication
Nanofabrication can generally be divided into two categories based on the approach (1-100 nm): Top-Down: Fabrication of device structures via monolithic processing on the nanoscale. Fabrication of device structures via systematic assembly of atoms, molecules or other basic units of matter.
Bottom-Up:
- Optical Apertures and Flow Orifices Electronics Semiconductor chips, anodic bonding MEMS Micro Electro Mechanical Systems Communication Fiber optics, switching
interconnects
Biotechnology
Nanotubes Medicine
Nanocomposites Electronics
in material compositions
mms://stream.techtv.com/windows/bigthinkers/20 02/bt020225b_165_0.asf
Generalized Microfabrication
Photolithography
Clean wafer : to remove particles on the surface as well as any traces of organic, ionic, and metallic impurities Dehydration bake: to drive off the absorbed water on the surface to promote the adhesion of PR (photoresist) Coating : a) Coat wafer with adhesion promoting film (e.g., HMDS) (optional) b) Coat with photoresist Soft bake : to drive off excess solvent and to promote adhesion Exposure Post exposure bake (optional): to suppress standing wave-effect Develop Clean, Dry Hard bake: to harden the PR and improve adhesion to the substrate
Photolithography
Additive Processes
Oxidation
Thermal Oxidation of Silicon is done in a furnace in wet or dry conditions
Additive Processes
Doping
The introduction of certain impurities in a semiconductor can change its electrical, chemical and even mechanical properties (microelectric industryfabrication of diodes and transistors). Purpose of Doping in MEMS - Creation of etch stop layers - Change restivity of the film (e.g. make piezoresistor, connecting wire) Dopants : to form N type region (Phosphorous, Arsenic), P type region (Boron) in silicon Doping Methods 1. Diffusion Dopants are diffused thermally into the substrate in furnace at 950 1280 0C. It is governed by Ficks Laws of Diffusion. 2. Ion Implantation Dopant ions bombarded into targeting substrate by high energy. Ion implantation are able to place any ion at any depth in sample.
Additive Processes
Physical Vapor Deposition (PVD)
The material to be deposited is transported from a source to the wafers, both being in the same chamber..
1. Evaporation
Deposition is achieved by evaporation or sublimation of heated metal onto substrate. This can be done either by resistance heating or by e-beam bombardment.
Thermal Evaporator
Additive Processes
Physical Vapor Deposition (PVD)
2. Sputtering
Sputtering is achieved by accelerated-high energy inert ion (Ar+) by DC or RF drive in plasma through potential gradient to bombard metallic target. Then the individual atoms of targeting material are removed from the surface and ejected toward the wafer. (deposited onto substrate placed on anode).
Additive Processes
Physical Vapor Deposition (PVD)
Additive Processes
Chemical Vapor Deposition (CVD)
All the deposition techniques using the reaction of chemicals in a gas phase to form the deposited thin film Materials deposited Polysilicon, silicon nitride (Si3N4), silicon oxide (SiOx), silicon carbide (SiC) etc. How does CVD Work? Gaseous reactants are introduced into chamber at elevated temperatures. Reactant reacts and deposits onto substrate Types of CVD LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD) Salient Features CVD results depend on pressure, gas, and temperature Can be diffusion or reaction limited Varies from film composition, crystallization, deposition rate and electrical and mechanical properties
Subtractive Processes
Thin film and bulk substrate etching is another fabrication step that is of fundamental importance to microfbrication.
Dry Etching
1. Dry Chemical Etching
HF Etching HF is a powerful etchant and hence, highly dangerous. XeF2 Etching 2XeF2+Si2Xe+SiF4 Isotropic etching (typically 1-3m/min) Does not attack aluminum, silicon dioxide, and silicon nitride
Subtractive Processes
Dry Etching
Plasma Etching
Reaction Mechanism Produce reactive species in gas-phase Adsorption, and diffuse over the surface
Subtractive Processes
Dry Etching
3. Deep Reactive Ion Etching (DRIE)
A very high-aspect-ratio silicon etch method (usually > 30:1) BOSCH Process Etch rate is 1.5 4 m/min SF6 to etch silicon Approx. 10nm flourcarbon polymer (similar is plasma deposited using C4H8 Energetic ions (SF6+) remove protective polymer at the bottom trench
Subtractive Processes
Subtractive Processes
Wet Etching
Isotropic Wet Etching
Isotropic etchants etch in all directions at nearly the same rate. Commonly use chemical for Silicon is HNA (HF/HNO3/Acetic Acid) This results in a finite amount of undercutting
Subtractive Processes
Wet Etching
Anisotropic Wet Etching
Anisotropic etchants etch much faster in one direction than in another. Etchants are generally Alkali Hydroxides (KOH, NaOH, CeOH, ..) KOH on silicon Slower etch rate on (111) planes Higher etch rate on (100) and (110) planes (400 times more faster than the (111) plane) Typical concentration of KOH is around 40 wt% Reaction : Silicon (s) + Water + Hydroxide Ions Silicates + Hydrogen
Surface Micromachining
Example
2. Pumping chamber 4. Outlet 6. Upper glass plate 8. patterned thin layer (for improved fluidics)
2 m
Si Nanowire Array
Thin Films
Nanoscale Thin Film Single two dimensional film, thickness < ~100 nm Electrons can be confined in one dimension; affects wavefunction, density of states Phonons can confined in one dimension; affects thermal transport Boundaries, interfaces affect transport
a
Bulk crystal Thin film
d
http://scsx01.sc.ehu.es/waporcoj/charla s/cursodoctorado/12
Wagner et al, Thin Solid Films, Vol. 490, pp. 12 19 (2003). http://www.bu.edu/mfg/pdf/Tuller.pdf
Nanowires
Solid, one dimensional Can be conducting, semiconducting, insulating Can be crystalline, low defects Can exhibit quantum confinement effects (electron, phonon) Narrowing wire diameter results in increase in 2 m band gap Narrowing wire diameter can result in Si Nanowire Array decrease in thermal conductivity New forms include core-shell and superlattice nanowires
Nanotube defined a long cylinder with inner and outer nm-sized diameters Nanowire defined a long, solid wire with nm diameter
Si/SiGe Nanowires
Nanowires Applications
Field effect transistors Thermoelectric materials Light emitting diodes Detectors Sensors Nanolasers Superlattice nanowires applications requiring
superlattices
in
http://www.photonics.com/spectra/tech/XQ/ ASP/techid.1525/QX/read.htm
Carbon Nanotubes
Carbon nanotube properties: One dimensional sheets of hexagonal network of carbon rolled to form tubes Approximately 1 nm in diameter Can be microns long Essentially free of defects Ends can be capped with half a buckyball Varieties include single-wall and multiwall nanotubes,ropes, bundles, arrays Structure (chirality, diameter) influences properties:
http://physicsweb.org/article/world/11/1/9/1 http://www.aip.org/mgr/png/2003/186.htm
Chiral
Other Nanotubes
Boron nitride nanotubes Boron nitride Resistance to oxidation, suited nanotubes adopt various for high temperatures shapes Youngs modulus of 1.22 TPa (red=boron, Semiconducting blue=nitrogen): Predictable electronic properties independent of diameter and # of layers SiC nanotubes: Resistance to oxidation Suitable for harsh environments SiC nanotubes Can functionalize surface Si grown at NASA Glenn: atoms
http://www.grc.nasa.gov/WWW/RT2002/5000/5510lienhard.html http://pubs.acs.org/cen/topstory/7912/7912notw1.html
Nanoparticles/Quantum Dots
Zero-dimensional particle Radius of particle or cluster Surface effects/chemistry important 105 nm Radius < 100 nm < 106 atoms per nanoparticle 104 nm bulk Size smaller than critical length scales (e.g. mean free path, wavelength) 103 nm Nano/quantum physical phenomena present 102 nm Large nanoparticles have same structure as bulk; small may be different nanoparticles 10 nm Synthesis: RF plasma, chemical, thermolysis, pulsed laser 1 nm quantum dots Old examples molecules
Stained glass small metal oxide clusters comparable in size to the wavelength of light Photography small colloidal silver particles
1A
Nanoparticles/Quantum Dots
Metalic nanoparticles
http://www.bnl.gov/bnlweb/pubaf/pr/ 2002/bnlpr071802.htm Bapat et al, J Appl Phys, Vol. 94, 1969 1974 (2003) www.aveka.com
Nanoparticle Probes
Objective: To detect and kill individual cancer cells before they manifest as tumors using functionalized nanoparticles 5 to 10 nm particles (small enough to interact with intracellular markers) nanoparticles are coated and functionalized with antibodies, oligonucleotides, peptide ligands and drugs Introduced to body via bloodstream Look for markers inside cell by MRI or deliver agent or irradiate
Nanocomposites
Nanocomposite consists of two or more synthesized materials of which at least one has nanoscale dimensions Can exhibit enhanced chemical, optical, physical, mechanical properties as compared with constituent bulk Multiple material possibilities
Why nano and not micro? Micro also gives increase elastic modulus, but microparticles act as stress concentrators, decrease in strain to failure, decrease in strength and toughness
Nanocomposite Applications
Luminescent nanocomposites for optoelectronics Electronics (e.g. dielectric layers) Intracellular manipulation Thermoelectric materials High-strength, toughness structural materials Electrolytes in batteries Insulation Coatings Gas separation Fire barriers
TiO2-oligonucleotide nanocomposites hybridized with DNA for cellular manipulation
Paunesku et al, Nature Mats, Vol. 2, 343 346 (2003)
Polymer containing 40 wt% silica particles for use as a gas separation membrane
properties mechanical electrical/optical magnetic Seebeck band coefficient failure yield gap carrier density tensile stiffness dielectri susceptibility electron strength c states magnetohardness modulus of constant elasticity conductivity resistance thermal conductivity specific heat
AFM modes
contact mode non-contact mode
Tip angstroms from surface (repelled) Constant force Highest resolution May damage surface
Tip hundreds of angstroms from surface (attracted) Variable force measured Lowest resolution Non-destructive
tapping mode
AFM images
Cu Nanowires
Ge islands on Si
Courtesy of F. Ernst
SEM: Cu Nanowires
AFM: Cu Nanowires
R. Adelung et al.
Courtesy of F. Ernst
sample
lens
Courtesy of F. Ernst
TEM of Ge on Si
HRTEM Cross-Sectional View
Courtesy of F. Ernst
TEM comparison
Standard TEM