History Geometry
Electronic Properties
Physical Properties
Separation
Introduction
History
50 nm MWCNT Published in Soviet Journal of Physical Chemistry Cold War hurt impact of discovery Some work done before 1991 but not a hot topic
Iijima discovers MWCNT in arc burned rods Mintmire, Dunlap, and Whites predict amazing electronic and physical properties
Add Transition metal to Arc Discharge method (same method as Bucky Balls)
Geometry
Rollup Vector
Chiral Angle
(n,m) n-m=3d
FETs work because of applied voltage on gate changes the amount of majority carriers decreasing Source-Drain Current SWCNT and MWCNT used
Current shape consistent with FET Bias VSD = 10 mA G(S) conductance varies by ~5 orders of magnitude Mobility and Hole concentration determined to be large
Q=CVG,T (VG,T voltage to deplete CNT of holes) C calculated from physical parameters of CNT p=Q/eL
MWCNT has characteristic shape of FET Hole density similar to SWCNT but Mobility determined to be higher
FET Conclusions
Higher carrier density than graphite Mobility similar to heavily p-doped silicon Conductance can be modulated by ~5 orders of magnitude in SWCNT MWCNT FET only possible after structural deformation
Quantum Wires
Coulomb Charging
Contact Resistance Lower than Rquantum=h/e2~26 k C very low s.t. EC=e2/2C very large
Quantum Wire
E levels separated by E The resonant tunneling implies that the electrons are being transported phase coherently in a single molecular orbital for at least the distance of the electrodes (140 nm)
Occurs when a discrete electron level tunnels resonantly though Ef of electrode If electron levels of SWCNT where continuous peak would be constant
SWCNT rope laid on ultra-filtration membrane AFM tip applies force to measure Shear Modulus G and Reduced Elastic Modulus Er
Summary of Results
Typical Values
Gdia ~ 478 GPa Ggla ~ 26.2 GPa Er-dia ~ 1220 GPa Er-gla ~ 65-90 GPa
Shear properties of SWCNT lacking (Even compared to MWCNT ropes) Elastic properties very promising
One major reason CNT devices have been so hard to scale up to industry uses is due to the inability to efficiently separate different species of CNT
Different types are produced randomly with 1/3 conducting 2/3 semiconducting
It has now been reported that with the use of structure-discriminating surfactants one can isolate a batch of CNT such that >97% CNT within 0.02 nm diameter
Overview of Technique
Surfactants change buoyancy properties of CNT Ultra-centrifugation techniques (which are scale-able) are used to separate different CNT Effective separation is seen
Conclusion
CNT devices show promise in molecular electronics both as wires and FET Physical properties are very promising being both strong and light Separation techniques continue to be developed to allow companies to make CNT devices
Sources
M. S. DRESSELHAUS, G. DRESSELHAUS, and R. SAITO. Carbon 33, 7 (1995) R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avourisa. App. Phys. Lett. 73, 17 (1998) Sander J. Tans, Michel H. Devoret et al. Nature 386, 474-477 (1997) Jean-Paul Salvetat et al. Phys. Rev. Lett. 82, 5 (1999) MICHAEL S. ARNOLD et al. Nature Nanotechnology 1, 60-65 (2006) www.noritake-elec.com/.../nano/structu.gif http://en.wikipedia.org/wiki/Carbon_nanotube academic.pgcc.edu/~ssinex/nanotubes/graphene.gif nano.gtri.gatech.edu/Images/MISC/figure4.gif