DokumenVLSI System Designdiunggah oleh
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- Dokumen2004 High Performance P-type Independent Gate FinFETsdiunggah oleheleenaamohapatra
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- Dokumen2005 Full Partial Depletion Effects in FinFETS(EXPERIMENTAL)diunggah oleheleenaamohapatra
- Dokumen2005 Analysis of the Parasitic Source Drain Resistance in Multigate-gate FETsdiunggah oleheleenaamohapatra
- Dokumen2005 an Air Spacer Technology for Improving Short Channel Immunity of MOSFETs With Raised Source Drain and High-k Dielectricdiunggah oleheleenaamohapatra
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- Dokumen2002 Electrical Charcteristics of FinFET With Vertically Nonuniform Source Drain Doping Profilediunggah oleheleenaamohapatra
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- Dokumen2004 High Performance P-type Independent Gate FinFETsdiunggah oleheleenaamohapatra
- Dokumen2004 a Highly Threshold Voltage Controllable 4t FinFET With an 8.5nm Thick Si-Fin Channeldiunggah oleheleenaamohapatra
- Dokumen2003_Sensitivity of Double Gate and FinFET_Devices to _Process _Variationsdiunggah oleheleenaamohapatra
- Dokumen2003 Extension and Source Drain Design for High Performance FinFET Devicesdiunggah oleheleenaamohapatra
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- Dokumen2003 Improved Independent Gate N-type Finfet Fabrication and Charcterizationdiunggah oleheleenaamohapatra
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