BIPOLAR JUNCTION TRANSISTORS

(BJT)

Oleh:
Fajar Budiman
fajarbdmn@gmail.com

Departemen Teknik Elektro

Institut Teknologi Sepuluh Nopember
2014
 Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp

The terminals are labeled:

• E - Emitter
• B - Base
• C - Collector

npn

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 Transistor Construction

• Emitor merupakan bahan semikonduktor yang diberi tingkat doping sangat tinggi.
• Kolektor diberi doping dengan tingkat yang sedang.
• Basis adalah bahan dengan dengan doping yang sangat rendah.
• Semakin rendah tingkat doping suatu bahan, maka semakin kecil
konduktivitasnya.karena jumlah pembawa mayoritasnya (elektron untuk bahan n; dan
hole untuk bahan p) adalah sedikit.

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 Transistor Operation
With the external sources, VEE and VCC, connected as shown:

• The emitter-base junction is forward biased

• The base-collector junction is reverse biased

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 Transistor Operation

PNP NPN

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 Transistor Operation

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 Transistor Operation
• Tegangan bias maju yang diberikan pada dioda emitor-basis (VEB) akan
mengurangi potensial penghalang Vo, sehingga pembawa muatan mayoritas
pada emitor akan mudah untuk berekombinasi ke basis.

• Karena konduktivitas basis yang rendah dan tipisnya basis, maka sebagian
besar pembawa muatan akan tertarik ke kolektor.

• Hal ini juga dikarenakan beda potensial pada basis-kolektor yang semakin
tinggi sebagai akibat penerapan bias mundur VCB.

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 Currents in a Transistor

Emitter current is the sum of the collector and

base currents:

IE  IC  IB

The collector current is comprised of two

currents:
IC  IC  I CO
majority minority

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 Transistor Configuration

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 Common-Base Configuration

• Pada konfigurasi basis bersama (common base = CB) sinyal input dimasukkan
ke emitor dan sinyal output diambil pada kolektor dengan basis sebagai
ground-nya.

• Common-Base memiliki Av > 1 dan AC < 1.

• Faktor penguatan arus pada basis bersama disebut dengan Alpha (α).

• αdc (alpha dc) adalah perbandingan arus IC dengan arus IE.

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Common-Base Configuration

The base is common to both input (emitter–base) and

output (collector–base) of the transistor.

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 Common-Base Amplifier

Input Characteristics

This curve shows the relationship

between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.

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 Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

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 Common-Base Configuration

• Pada saat tegangan VBE sekitar 0,7 Volt (tegangan cut-in) arus IE akan naik dengan
cepat.

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 Operating Regions

• Active – Operating range of the

amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.

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 Approximations

Emitter and collector currents:

I I
C E

Base-emitter voltage:

VBE  0.7 V (for Silicon)

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 Alpha (a)

Alpha (a) is the ratio of IC to IE :

IC
αdc 
IE

Ideally: a = 1
In reality: a is between 0.9 and 0.998

Alpha (a) in the AC mode:

ΔI C
αac 
ΔI E

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 Transistor Amplification

Currents and Voltages: Voltage Gain:

V 200mV VL 50V
I E  Ii  i   10mA Av    250
Ri 20Ω Vi 200mV
I I
C E
I  I  10 mA
L i
V  I R  (10 ma)(5 kΩ)  50 V
L L

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 Common–Emitter Configuration

The emitter is common to both input

(base-emitter) and output (collector-
emitter).

The input is on the base and the

output is on the collector.

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 Common–Emitter Configuration

• Pada konfigurasi emitor bersama (common emitter = CE) sinyal input

diumpankan pada basis dan output diperoleh dari kolektor dengan
emitor sebagai groundnya.
• Faktor penguatan arus pada emitor bersama disebut dengan BETA (β).

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Common-Emitter Characteristics

Collector Characteristics Base Characteristics

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 Common-Emitter Amplifier Currents
Ideal Currents

IE = IC + IB IC = a IE

Actual Currents

IC = a IE + ICBO where ICBO = minority collector current

ICBO is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.

When IB = 0 A the transistor is in cutoff, but there is some minority

current flowing called ICEO.
I CBO
I CEO  I B 0 μA
1 α

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 Beta ()
 represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
βdc 
IB

In AC mode:
IC
 ac  VCE constant
IB

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 Beta ()
Determining  from a Graph

(3.2 mA  2.2 mA)

β AC 
(30 μA  20 μA)
1 mA
 V  7.5
10 μA CE
 100

2.7 mA
β DC  VCE  7.5
25 A
 108

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 Beta ()

Relationship between amplification factors  and a

β α
α β
β1 α 1

Relationship Between Currents

I C  βI B I E  (β  1)IB

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 Common–Emitter Configuration

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 Common–Collector Configuration

The input is on the

base and the output is
on the emitter.

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 Common–Collector Configuration

The characteristics are

similar to those of the
common-emitter
configuration, except the
vertical axis is IE.

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 Common–Collector Configuration

• Pada konfigurasi Colector bersama (common collector = CC) sinyal

input diumpankan pada basis dan output diperoleh pada emitor
dengan collector sebagai groundnya.

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Operating Limits for Each Configuration

VCE is at maximum and IC is at

minimum (ICmax= ICEO) in the cutoff
region.

IC is at maximum and VCE is at

minimum (VCE max = VCEsat = VCEO) in
the saturation region.

The transistor operates in the active

region between saturation and cutoff.

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 Power Dissipation
Common-base:
PCmax  VCB I C

Common-emitter:

PCmax  VCE I C

Common-collector:

PCmax  VCE I E

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Transistor Specification Sheet

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Transistor Specification Sheet

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 Transistor Testing
• Curve Tracer
Provides a graph of the characteristic curves.

• DMM
Some DMMs measure DC or hFE.

• Ohmmeter

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Transistor Terminal Identification

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