A. A.

Mannan

Simulasi Depletion MOSFETs Scheme

Dengan menggunakan dasar rangkaian sebagai berikut:

Dengan menggunakan program PSpice, listing spice (dengan bantuan software Microwind) adalah
sebagai berikut:
CIRCUIT D:\My Documents\Arif\Other\Program & Roket\enhancement.MSK
*
* IC Technology: CMOS 90nm - 6 Metal
*
VDD 1 0 DC 1.20
V8_Vdd 8 0 DC 0.01V
Vsinus1 9 0 PULSE(0.00 1.20 0.09N 100.00N 0.01N 0.09N 100.19N)
*
* List of nodes
* "N3" corresponds to n3
* "N4" corresponds to n4
* "N5" corresponds to n5
* "s1" corresponds to n7
* "sinus1" corresponds to n9
*
* MOS devices
MN1 7 9 3 0 N2 W= 25U L= 5U
MN2 0 5 5 0 N1 W= 50U L= 5U
MN3 5 3 2 0 N1 W= 50U L= 5U
MN4 0 5 7 0 N1 W= 50U L= 5U
MN5 0 8 4 0 N2 W= 25U L= 5U
MP1 3 4 2 0 P1 W= 10U L= 5U

MP2 4 4 2 0 P1 W= 10U L= 5U
*
C2 2 0 0.562fF
C3 3 0 0.310fF
C4 4 0 0.443fF
C5 5 0 0.467fF
C7 7 0 0.213fF
C8 8 0 0.066fF
C9 9 0 0.107fF
*
* n-MOS Model 3 :
* low leakage
.MODEL N1 NMOS LEVEL=3 VTO=0.40 UO=600.000 TOX= 2.0E-9
+LD =0.000U THETA=0.500 GAMMA=0.400
+PHI=0.200 KAPPA=0.060 VMAX=120.00K
+CGSO=100.0p CGDO=100.0p
+CGBO= 60.0p CJSW=240.0p
*
* n-MOS Model 3 :
* low leakage
.MODEL N2 NMOS LEVEL=3 VTO=-0.40 UO=600.000 TOX= 2.0E-9
+LD =0.000U THETA=0.500 GAMMA=0.400
+PHI=0.200 KAPPA=0.060 VMAX=120.00K
+CGSO=100.0p CGDO=100.0p
+CGBO= 60.0p CJSW=240.0p
*
* p-MOS Model 3:
* low leakage
.MODEL P1 PMOS LEVEL=3 VTO=-0.45 UO=200.000 TOX= 2.0E-9
+LD =0.000U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.060 VMAX=110.00K
+CGSO=100.0p CGDO=100.0p
+CGBO= 60.0p CJSW=240.0p
*
* Transient analysis
*
.TEMP 27.0
.TRAN 0.1N 100.00N
* (Pspice)
.PROBE
.END

Hasil simulasi adalah sebagai berikut:

Terlihat bahwa hasil keluaran atau V(7) sudah mengikuti tegangan masukan V(9) tetapi nilai penguatan
tidak tepat. Hal ini dikarenakan parameter-parameter mosfet tidak dimasukkan atau menggunakan
parameter yang di generate otomatis oleh Microwind sendiri.

Dengan menggunakan PSpice Schematic, dilakukan uji pada rangkaian yang sama

Listing program adalah sebagai berikut (hasil konversi dari PSpice Schematic)
**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************
* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch
**** CIRCUIT DESCRIPTION
******************************************************************************
* Schematics Version 9.1 - Web Update 1

* Mon May 28 20:07:52 2012

** Analysis setup **
.tran 0ns 100ms
.OP
.LIB "D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.lib"
* From [PSPICE NETLIST] section of pspiceev.ini:
.lib "nom.lib"
.INC "Schematic1.net"
**** INCLUDING Schematic1.net ****
* Schematics Netlist *
M_M2
out $N_0001 0 0 MbreakN
+ L=5u
+ W=50u
M_M6
$N_0001 $N_0001 0 0 MbreakN
+ L=5u
+ W=50u
M_M7
vdd $N_0002 $N_0001 $N_0001 MbreakN
+ L=5u
+ W=50u
M_M5
vdd $N_0003 $N_0003 $N_0003 MbreakP
+ L=5u
+ W=10u
M_M4
vdd $N_0003 $N_0002 $N_0002 MbreakP
+ L=5u
+ W=10u
R_R1
0 out 10k
M_M3
$N_0003 0 0 0 MbreakND
+ L=5u
+ W=25u
M_M1
$N_0002 in out out MbreakND-X
+ L=5u
+ W=25u
V_V5
in 0 AC 0.5V
+SIN 1V 1 50 0 0 0
V_V4
vdd 0 3V
**** RESUMING Schematic1.cir ****
.INC "Schematic1.als"
**** INCLUDING Schematic1.als ****
* Schematics Aliases *
.ALIASES
M_M2
M2(d=out g=$N_0001 s=0 s=0 )
M_M6
M6(d=$N_0001 g=$N_0001 s=0 s=0 )
M_M7
M7(d=vdd g=$N_0002 s=$N_0001 s=$N_0001 )
M_M5
M5(d=vdd g=$N_0003 s=$N_0003 s=$N_0003 )
M_M4
M4(d=vdd g=$N_0003 s=$N_0002 s=$N_0002 )
R_R1
R1(1=0 2=out )
M_M3
M3(d=$N_0003 g=0 s=0 s=0 )
M_M1
M1(d=$N_0002 g=in s=out s=out )
V_V5
V5(+=in -=0 )
V_V4
V4(+=vdd -=0 )
_ _(vss=0)
_ _(out=out)
_ _(vdd=vdd)
_ _(in=in)
.ENDALIASES
**** RESUMING Schematic1.cir ****
.probe
.END
**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************
* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch
**** MOSFET MODEL PARAMETERS
******************************************************************************
MbreakND-X MbreakN
MbreakP
MbreakND
NMOS
NMOS
PMOS
NMOS
LEVEL 1
1
1
1

L 100.000000E-06 100.000000E-06 100.000000E-06 100.000000E-06

W 100.000000E-06 100.000000E-06 100.000000E-06 100.000000E-06
VTO -4
0
0
-4
KP 20.000000E-06 20.000000E-06 20.000000E-06 20.000000E-06
GAMMA 0
0
0
0
PHI .6
.6
.6
.6
LAMBDA 0
0
0
0
IS 10.000000E-15 10.000000E-15 10.000000E-15 10.000000E-15
JS 0
0
0
0
PB .8
.8
.8
.8
PBSW .8
.8
.8
.8
CJ 0
0
0
0
CJSW 0
0
0
0
CGSO 0
0
0
0
CGDO 0
0
0
0
CGBO 0
0
0
0
TOX 0
0
0
0
XJ 0
0
0
0
UCRIT 10.000000E+03 10.000000E+03 10.000000E+03 10.000000E+03
DIOMOD 1
1
1
1
VFB 0
0
0
0
LETA 0
0
0
0
WETA 0
0
0
0
U0 0
0
0
0
TEMP 0
0
0
0
VDD 0
0
0
0
XPART 0
0
0
0
**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************
* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch
**** SMALL SIGNAL BIAS SOLUTION
TEMPERATURE = 27.000 DEG C
******************************************************************************
NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE
( in) 1.0000 ( out) 1.4500 ( vdd) 3.0000 ($N_0001) 1.1890
($N_0002) 2.3780
($N_0003) 2.3558
VOLTAGE SOURCE CURRENTS
NAME
CURRENT
V_V5
0.000E+00
V_V4
-1.093E-03
TOTAL POWER DISSIPATION 3.28E-03 WATTS
**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************
* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch
**** OPERATING POINT INFORMATION TEMPERATURE = 27.000 DEG C
******************************************************************************
**** MOSFETS
NAME
M_M2
M_M6
M_M7
M_M5
M_M4
MODEL
MbreakN MbreakN MbreakN MbreakP MbreakP
ID
1.41E-04 1.41E-04 1.41E-04 6.65E-04 2.86E-04
VGS
1.19E+00 1.19E+00 1.19E+00 0.00E+00 -2.22E-02
VDS
1.45E+00 1.19E+00 1.81E+00 6.44E-01 6.22E-01
VBS
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
VTH
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
VDSAT
1.19E+00 1.19E+00 1.19E+00 -6.44E-01 -6.44E-01
Lin0/Sat1 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00
if
-1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00
ir
-1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00
TAU
-1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00
GM
2.38E-04 2.38E-04 2.38E-04 2.58E-05 2.49E-05
GDS
0.00E+00 0.00E+00 0.00E+00 0.00E+00 8.89E-07
GMB
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CBD
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CBS
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CGSOV
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CGDOV
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CGBOV
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
CGS
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGD
CGB

0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

NAME
M_M3
M_M1
MODEL
MbreakND MbreakND-X
ID
6.65E-04 2.86E-04
VGS
0.00E+00 -4.50E-01
VDS
2.36E+00 9.28E-01
VBS
0.00E+00 0.00E+00
VTH
-4.00E+00 -4.00E+00
VDSAT
4.00E+00 3.55E+00
Lin0/Sat1 -1.00E+00 -1.00E+00
if
-1.00E+00 -1.00E+00
ir
-1.00E+00 -1.00E+00
TAU
-1.00E+00 -1.00E+00
GM
2.36E-04 9.28E-05
GDS
1.64E-04 2.62E-04
GMB
0.00E+00 0.00E+00
CBD
0.00E+00 0.00E+00
CBS
0.00E+00 0.00E+00
CGSOV
0.00E+00 0.00E+00
CGDOV
0.00E+00 0.00E+00
CGBOV
0.00E+00 0.00E+00
CGS
0.00E+00 0.00E+00
CGD
0.00E+00 0.00E+00
CGB
0.00E+00 0.00E+00
**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************
* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch
**** INITIAL TRANSIENT SOLUTION
TEMPERATURE = 27.000 DEG C
******************************************************************************
NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE
( in) 1.0000 ( out) 1.4500 ( vdd) 3.0000 ($N_0001) 1.1890
($N_0002) 2.3780
($N_0003) 2.3558
VOLTAGE SOURCE CURRENTS
NAME
CURRENT
V_V5
0.000E+00
V_V4
-1.093E-03
TOTAL POWER DISSIPATION 3.28E-03 WATTS
JOB CONCLUDED
TOTAL JOB TIME
.06

Hasil simulasi masukan tegangan ramp adalah sebagai berikut:

Hasil simulasi dengan masukan sinosoida adalah sebagai berikut:

Derdasarkan hasil tersebut, dapat dilihat bahwa nilai output telah mengikuti nilai masukan tetapi
dengan memiliki offset tegangan sebesar 1,2V dan memiliki redaman bila dibandingkan langsung antara
input dan output, hal ini dikarenakan parameter-parameter mosfet masih belum sesuai dengan
rangkaian asli yang diinginkan (parameter adalah hasil generate otomatis dari PSpise sendiri).