THYRISTOR

Outline
◦ Introduction
◦ Shockley Diode/four layers diode (diode empat lapis)
◦ Silicon-Controlled Rectifier (SCR)
◦ DIAC
◦ TRIAC
◦ Silicon-Controlled Switch (SCS)
◦ Unijunction Transistor (UJT)
◦ Programmable Unijunction Transistor (PUT)
 Introduction
A family of devices known as thyristors are constructed
of four semiconductor layers (pnpn).

Unidirectional
PNPN Dioda, SCR, LASCR, PUT, SCS
Klasifikasi thyristor :

Bidirectional
DIAC, TRIAC

Fauzan A Mahanani, S.Pd

 Struktur Thyristor
Ciri-ciri utama dari sebuah thyristor adalah komponen yang terbuat dari bahan
semikonductor silikon.
Walaupun bahannya sama, tetapi struktur P-N junction yang dimilikinya lebih
kompleks dibanding transistor bipolar. Komponen thyristor sering digunakan sebagai
saklar (switch) daripada untuk penguat arus atau tegangan seperti halnya transistor

Struktur Thyristor
Teknologi dan Rekayasa
 Struktur Thyristor
Struktur dasar thyristor adalah struktur 4 layer PNPN seperti yang ditunjukkan
pada gambar berikut.

Jika dipilah, struktur Thyristor

dapat dilihat sebagai dua buah
struktur junction PNP dan NPN yang
tersambung di tengah seperti pada
gambar di samping. Ini tidak lain
adalah dua buah transistor PNP dan
NPN yang tersambung pada masing-
masing kolektor dan base. Jika
divisualisasikan sebagai transistor Q1
dan Q2, maka struktur thyristor ini
dapat diperlihatkan seperti pada
gambar-2 yang berikut ini.

Teknologi dan Rekayasa

 Konfigurasi Transistor

Terlihat di sini kolektor transistor Q1 tersambung pada base transistor Q2 dan

sebaliknya kolektor transistor Q2 tersambung pada base transistor Q1. Rangkaian
transistor yang demikian menunjukkan adanya loop penguatan arus di bagian
tengah.
Bila ada arus sebesar Ib yang mengalir pada base transistor Q2, Maka akan
ada arus Ic yang mengalir pada kolektor Q2. Arus kolektor ini merupakan arus
base Ib pada transistor Q1, sehingga muncul penguatan pada arus kolektor
transistor Q1. Demikian seterusnya sehingga makin lama sambungan PN dari
thyristor ini di bagian tengah akan mengecil dan hilang. Tertinggal hanyalah
lapisan P dan N dibagian luar.  Teknologi dan Rekayasa
Shockley Diode
◦ The 4-layer diode (also known as Shockley diode) is a type of thyristor, which is a
class of devices constructed of four semiconductor layers

PNP

NPN
Cara Kerja

(c)

◦ When a positive bias voltage is applied to the anode with respect to the
cathode, as shown in Figure (b), the base-emitter junctions of Q1 and Q2 ( pn
junctions 1 and 3 in Figure (a)) are forward-biased, and the common base-
collector junction ( pn junction 2 in Figure (a)) is reverse-biased.
◦ The currents in a 4-layer diode are shown in the equivalent circuit in Figure (c).
At low-bias levels, there is very little anode current, and thus it is in the off
state or forwardblocking region.
 Karakteristik dioda empat lapis

◦ Ketika VAK nilainya bertambah, maka IA juga akan ikut bertambah pula. Pada titik
IA = IS (switching current), VAK = V) BR(F) dan struktur internal transistor akan
saturasi. Pada saat hal ini terjadi forward voltage drop V AK secara tiba-tiba akan
turun dan dioda empat lapis memasuki daerah forward_conduction -- devide on
(behave like closed switch).
◦ Ketika arus anode IA turun di bawah IH (holding value) device akan off
Keterangan
◦ Holding Current
Once the 4-layer diode is conducting (in the on state), it will continue to conduct
until the anode current is reduced below a specified level, called the holding
current, IH. This parameter is also indicated on the characteristic curve in
Figure above. When IA falls below IH the device rapidly switches back to the off
state and enters the forward-blocking region.
◦ Switching Current
The value of the anode current at the point where the device switches from the
forward-blocking region (off) to the forward-conduction region (on) is called the
switching current, IS. This value of current is always less than the holding
current, IH.
Contoh
◦ Tentukan arus anode ketika device on pada rangkaian di bawah. VBR(F) adalah
10 V. Asumsikan tegangan drop forward adalah 0.9 V.
Solusi
◦ Tegangan yang melintasi Rs adalah

◦ Arus anode adalah

Aplikasi diode 4-layers
◦ Cari aplikasinya
 THE SILICON-CONTROLLED RECTIFIER (SCR)

◦ An SCR (silicon-controlled rectifier) is a 4-layer pnpn device similar to the 4-layer

diode except with three terminals: anode, cathode, and gate.
 SCR Equivalent Circuit

◦ Like the 4-layer diode operation, the SCR operation can best be understood by
thinking of its internal pnpn structure as a two-transistor arrangement, as shown in
Figure above. This structure is like that of the 4-layer diode except for the gate
connection. The upper pnp layers act as a transistor,Q1 , and the lower npn layers act
as a transistor, Q2. Again, notice that the two middle layers are “shared.”
 ANODE
Equivalent Circuit
ANODE

Q1

N N
BJT_PNP_VIRTUAL

GATE
Q2
P P
GATE
BJT_NPN_VIRTUAL

CATHODE

CATHODE
 Apply Biasing
With the Gate terminal OPEN,
both transistors are OFF. As
the applied voltage increases,
there will be a “breakdown”
that causes both transistors to
conduct (saturate) making IF >
0 and VAK = 0.
VBreakdown = VBR(F)
 Apply a Gate Current
For 0 < VAK < VBR(F),

Turn Q2 ON by applying a current

into the Gate

This causes Q1 to turn ON, and

eventually both transistors
SATURATE
VAK = VCEsat + VBEsat

If the Gate pulse is removed, Q1

and Q2 still stay ON!
Turning the SCR On
Kurva karakteristik SCR
How do you turn SCR off?
◦ Anode current interruption
◦ Forced commutation
How do you turn it OFF?
◦ Cause the forward current to fall below the value if the “holding” current, I H

◦ Reverse bias the device

 SCR Characteristics
◦ Forward-breakover voltage VBR(F)
◦ Holding current (IH)
◦ Gate trigger current (IGT)
◦ Average forward current IF(avg)
◦ Forward-conduction region
◦ Forward-blocking and reverse-blocking regions
◦ Reverse-breakdown voltage VBR(R)
 The Light-Activated SCR
(LASCR)

◦ The light-activated silicon-controlled rectifier (LASCR) is a four-layer

semiconductor device (thyristor) that operates essentially as does the conventional
SCR except that it can also be light-triggered. The LASCR conducts current in one
direction when activated by a sufficient amount of light and continues to conduct
until the current falls below a specified value.
◦ The LASCR conducts current in one direction when activated by a sufficient amount
of light and continues to conduct until the current falls below a specified value.
Aplikasi SCR dan LASCR
◦ Berikan contoh aplikasi SCR dan LASCR
DIAC

◦ A diac is a two-terminal four-layer semiconductor device (thyristor) that can

conduct current in either direction when activated.
◦ Conduction occurs in a diac when the breakover voltage is reached with either
polarity across the two terminals.
◦ Once breakover occurs, current is in a direction depending on the polarity of
the voltage across the terminals. The device turns off when the current drops
below the holding value.
Karakteristik DIAC
◦ Hanya dengan tegangan breakdown tertentu barulah DIAC dapat
menghantarkan arus. Arus yang dihantarkan tentu saja bisa bolak-balik dari
anoda menuju katoda dan sebaliknya. Kurva karakteristik DIAC sama seperti
TRIAC, tetapi yang hanya perlu diketahui adalah berapa tegangan breakdown-
nya
Diac equivalent circuit and bias conditions

The equivalent circuit of a diac consists of four transistors arranged as shown in

Figure (a).
 TRIAC

◦ Struktur TRIAC sebenarnya adalah sama dengan dua buah SCR yang arahnya bolak-
balik dan kedua gate-nya disatukan. Simbol TRIAC ditunjukkan pada gambar di
atas. TRIAC biasa juga disebut thyristor bi-directional.
◦ Or triac is like a diac with a gate terminal
◦ A triac can be turned on by a pulse of gate current and require the breakover voltage
to initiate conduction, as does the diac. Basically, a triac can be thought of simply as
two SCRs connected in parallel and in opposite directions with a common gate
terminal. Unlike the SCR, the triac can conduct current in either direction when it is
triggered on, depending on the polarity of the voltage across its A1 and A2 terminals.
 Kurva karakteristik TRIAC

◦ TRIAC bekerja mirip seperti SCR yang paralel bolak-balik, sehingga dapat
melewatkan arus dua arah. Kurva karakteristik dari TRIAC adalah seperti pada
gambar di atas.
Bilateral operation of a triac
Aplikasi Triac
◦ Berikan contoh aplikasi Triac
THE SILICON-CONTROLLED
SWITCH (SCS)
◦ The silicon-controlled switch (SCS) is similar in
construction to the SCR. The SCS, however, has two
gate terminals, the cathode gate and the anode gate.
The SCS can be turned on and off using either gate
terminal. Remember that the SCR can be only turned
on using its gate terminal. Normally, the SCS is
available in power ratings lower than those of the
SCR.
 Basic Operation

◦ An SCS (silicon-controlled switch) is a four-terminal thyristor that has two gate

terminals that are used to trigger the device on and off
Aplikasi SCS
◦ Berikan contoh aplikasi SCS
THE UNIJUNCTION
TRANSISTOR (UJT)
◦ The UJT (unijunction transistor) is a three-terminal
device whose basic construction is shown in Figure
(a). The schematic symbol appears in Figure (b).
◦ Do not confuse this symbol with that of a JFET; the
difference is that the arrow is at an angle for the
UJT.
Equivalent Circuit

◦ Jelaskan cara kerjanya serta aplikasinya

THE PROGRAMMABLE UNIJUNCTION
TRANSISTOR (PUT)

◦ The programmable unijunction transistor (PUT) is actually a type of thyristor and not
like the UJT at all in terms of structure.
◦ The PUT is similar to an SCR except that its anode-to-gate voltage can be used to
both turn on and turn off the device.
Aplikasi PUT
◦ Berikan contoh aplikasi PUT