BJT

(Bipolar Junction Transistor)

Elektronika
(TKE 4012)

Eka Maulana

maulana.lecture.ub.ac.id
 Pokok Bahasan
• Dasar Transistor
• Arus transistor
• Koneksi rangkaian
• Kurva transistor
• Pendekatan transistor
• Datasheet
• Load Line
• Titik Kerja

BJT (Bipolar Junction Transistor)

BJT terdiri dari 3 bagian (dopping)

N KOLEKTOR
(medium doping)

BASIS
P (light doping)

EMITOR
N (heavy doping)

BJT (Bipolar Junction Transistor)

 Saat transistor NPN dibias maju,
electron emiter menyebar ke basis dan kolektor

RC
N
RB VCE
P VCC

VBE N
VBB

BJT (Bipolar Junction Transistor)

 IC IC
IB IB

IE IE

Aliran Arus Aliran Elektron

I E = IC + I B IC @ IE IB << IC

IC IC
adc = bdc =
IE IB
BJT (Bipolar Junction Transistor)
 Common Emitor memiliki dua loop:
Loop Basis dan Loop Kolektor

RC

RB VCE

VCC

VBE
VBB

BJT (Bipolar Junction Transistor)

 Notasi Subscript

• Ketika notasi subscript sama, maka

menyatakan sumber tegangan (VCC).
• Ketika notasi subscript sama,
menyatakan tegangan dua titik (VCE).
• Notasi single digunakan untuk
menyatakan tegangan node dengan
ground sebagai referensi (VC).

BJT (Bipolar Junction Transistor)

 Rangkaian pada BASIS biasanya dianalisis
dengan pendekatan yang sama seperti digunakan pada dioda.

VBB - VBE
IB = RC
RB
VCE

RB VCC

VBE
VBB

BJT (Bipolar Junction Transistor)

 Grafik IC versus VCE

14 100 mA
12 80 mA
10 60 mA
IC (mA) 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE (Volts)

(nilai IB baru merepresentasikan kurva baru)

BJT (Bipolar Junction Transistor)
 Daerah Kerja Transistor

• Cutoff - digunakan untuk aplikasi switching

• Active - digunakan untuk penguatan linear
• Saturation - digunakan untuk aplikasi switching
• Breakdown - dapat merusak transistor

BJT (Bipolar Junction Transistor)

Pendekatan Rangkaian Transistor

• First: dioda ideal pada basis-emitor dan

menggunakan bIB untuk menentukan IC.
• Second: menggunakan VBE dan bIB untuk
menentukan IC.
• Third (and higher): menggunakan
perhitungan resistansi bulk dan pengaruh
lain. Biasanya diselesaikan dengan simulasi
komputer.

BJT (Bipolar Junction Transistor)

 Pendekatan Kedua:

VBE = 0.7 V bdcIB VCE

BJT (Bipolar Junction Transistor)

 VBB - VBE
IB =
RB
5 V - 0.7 V
IB = = 43 mA RC
100 kW

100 kW

RB VCC

VBE = 0.7 V
VBB 5V

BJT (Bipolar Junction Transistor)

 IC = bdc IB

IC = 100 x 43 mA = 4.3 mA RC

100 kW
bdc = 100
RB VCC

IB = 43 mA
VBB 5V

BJT (Bipolar Junction Transistor)

 VRC = IC x RC

VRC = 4.3 mA x 1 kW = 4.3 V 1 kW RC

IC = 4.3 mA
100 kW

RB 12 V VCC

IB = 43 mA
VBB 5V

BJT (Bipolar Junction Transistor)

 VCE = VCC - VRC IC = 4.3 mA

VCE = 12 V - 4.3 V = 7.7 V 1 kW RC

100 kW VCE

RB 12 V VCC

IB = 43 mA
VBB 5V

BJT (Bipolar Junction Transistor)

Typical Breakdown Ratings
• VCBO = 60 V
• VCEO = 40 V
• VEBO = 6 V

• Note: these are reverse breakdown ratings

BJT (Bipolar Junction Transistor)

 Grafik breakdown Colector

14
12
10
IC (mA) 8
6
4
2
0 50
VCE (Volts)

BJT (Bipolar Junction Transistor)

Typical Maximum Ratings
• IC = 200 mA dc
• PD = 250 mW (for TA = 60 oC)
• PD = 350 mW (for TA = 25 oC)
• PD = 1W (for TC = 60 oC)

BJT (Bipolar Junction Transistor)

 Pembiasan BJT
(Bipolar Junction Transistor)

Elektronika
(TKE 4012)

Eka Maulana

maulana.lecture.ub.ac.id
 VCE = VCC - ICRC
1 kW RC

VCE

RB 12 V VCC

VBB 12 V
 VCC - VCE
IC = Persaman ini menghasilkan load line.
RC

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
 12 V
IC =
1 kW
1 kW RC
Mental
short

RB 12 V VCC

VBB 12 V
 12 V
IC = = 12 mA Arus satutasi
1 kW

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
 1 kW RC

Mental
RB open 12 V VCC

VBB 12 V
 VCE(cutoff) = VCC

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
 load line baru dengan kemiringan yang sama

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
 Ubah RC:
750 W
1 kW RC

VCE

RB 12 V VCC

VBB 12 V
 Smaller RC menghasilkan steeper slope

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
Rangkain dapat dioperasikan pada setiap titik pada load line

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
The operating point is determined by the base current.
VBB - VBE
IB =
RB
1 kW RC
12 V - 0.7 V
IB = = 40 mA
283 kW

RB = 283 kW 12 V VCC

VBB 12 V
 The operating point is called the quiescent point.

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
Q 40 mA
6
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
This Q point is in the linear region.
Saturation and cutoff are non-linear operating points.

14 100 mA
12 80 mA
10 60 mA
IC in mA 8
6 40 mA
4 20 mA
2
0 mA
0 2 4 6 8 10 12 14 16 18
VCE in Volts
These Q points are used in switching applications.
 Recognizing saturation
• Assume linear operation.
• Perform calculations for currents and
voltages.
• An impossible result means the
assumption is false.
• An impossible result indicates saturation.
 Base bias
• The base current is established by VBB
and RB.
• The collector current is b times larger in
linear circuits.
• The transistor current gain will have a
large effect on the operating point.
• Transistor current gain is unpredictable.
 Emitter bias:
11 kW
kW RC
VBB - VBE IC @ IE
IE = = 1.95 mA
RE

15 V VCC

VBB 5V 2.2 kW RE

VC = 15 V - (1.95 mA)(1 kW) = 13.1 V

VCE = 13.1 V - 4.3 V = 8.8 V