BJT

(Bipolar Junction Transistor)

Elektronika
(TKE 4012)
Eka Maulana

maulana.lecture.ub.ac.id

Pokok Bahasan

Dasar Transistor
Arus transistor
Koneksi rangkaian
Kurva transistor
Pendekatan transistor
Datasheet
Load Line
Titik Kerja
BJT (Bipolar Junction Transistor)

BJT terdiri dari 3 bagian (dopping)

KOLEKTOR
(medium doping)

P
N

BASIS
(light doping)

EMITOR
(heavy doping)

BJT (Bipolar Junction Transistor)

Saat transistor NPN dibias maju,

electron emiter menyebar ke basis dan kolektor

RC

N
VCE

RB

P
VBE

VCC

VBB

BJT (Bipolar Junction Transistor)

IC

IC

IB

IB

IE

IE
Aliran Elektron

Aliran Arus
IC @ IE

I E = IC + I B
adc =

IC
IE

bdc =

IB << IC

IC
IB
BJT (Bipolar Junction Transistor)

Common Emitor memiliki dua loop:

Loop Basis dan Loop Kolektor

RC

RB

VCE
VCC
VBE

VBB

BJT (Bipolar Junction Transistor)

Notasi Subscript
Ketika notasi subscript sama, maka
menyatakan sumber tegangan (VCC).
Ketika notasi subscript sama,
menyatakan tegangan dua titik (VCE).
Notasi single digunakan untuk
menyatakan tegangan node dengan
ground sebagai referensi (VC).
BJT (Bipolar Junction Transistor)

Rangkaian pada BASIS biasanya dianalisis

dengan pendekatan yang sama seperti digunakan pada dioda.

VBB - VBE
IB =

RC

RB

VCE
VCC

RB
VBE
VBB

BJT (Bipolar Junction Transistor)

Grafik IC versus VCE

100 mA

14
12
10
IC (mA) 8
6
4
2

80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

0 mA

VCE (Volts)
(nilai IB baru merepresentasikan kurva baru)
BJT (Bipolar Junction Transistor)

Daerah Kerja Transistor

Cutoff - digunakan untuk aplikasi switching

Active - digunakan untuk penguatan linear
Saturation - digunakan untuk aplikasi switching
Breakdown - dapat merusak transistor

BJT (Bipolar Junction Transistor)

Pendekatan Rangkaian Transistor

First: dioda ideal pada basis-emitor dan
menggunakan bIB untuk menentukan IC.
Second: menggunakan VBE dan bIB untuk
menentukan IC.
Third (and higher): menggunakan
perhitungan resistansi bulk dan pengaruh
lain. Biasanya diselesaikan dengan simulasi
komputer.
BJT (Bipolar Junction Transistor)

Pendekatan Kedua:

VBE = 0.7 V

bdcIB

VCE

BJT (Bipolar Junction Transistor)

VBB - VBE
IB =
IB =

RB
5 V - 0.7 V

= 43 mA

100 kW

RC

100 kW
VCC

RB
VBB

5V

VBE = 0.7 V

BJT (Bipolar Junction Transistor)

IC = bdc IB
IC = 100 x 43 mA = 4.3 mA
100 kW
RB

RC
bdc = 100

VCC

IB = 43 mA
VBB

5V

BJT (Bipolar Junction Transistor)

VRC = IC x RC
VRC = 4.3 mA x 1 kW = 4.3 V
100 kW

1 kW

IC = 4.3 mA
12 V

RB

RC

VCC

IB = 43 mA
VBB

5V

BJT (Bipolar Junction Transistor)

VCE = VCC - VRC

IC = 4.3 mA

VCE = 12 V - 4.3 V = 7.7 V

100 kW

1 kW

VCE
12 V

RB

RC

VCC

IB = 43 mA
VBB

5V

BJT (Bipolar Junction Transistor)

Typical Breakdown Ratings

VCBO = 60 V
VCEO = 40 V
VEBO = 6 V
Note: these are reverse breakdown ratings

BJT (Bipolar Junction Transistor)

Grafik breakdown Colector

14
12
10
IC (mA) 8
6
4
2
0

50
VCE (Volts)

BJT (Bipolar Junction Transistor)

Typical Maximum Ratings

IC =
PD =
PD =
PD =

200 mA dc
250 mW (for TA = 60 oC)
350 mW (for TA = 25 oC)
1W
(for TC = 60 oC)

BJT (Bipolar Junction Transistor)

Pembiasan BJT
(Bipolar Junction Transistor)

Elektronika
(TKE 4012)
Eka Maulana

maulana.lecture.ub.ac.id

VCE = VCC - ICRC

1 kW

RC

VCE
RB
VBB

12 V

12 V

VCC

VCC - VCE
IC =
RC

Persaman ini menghasilkan load line.

100 mA

14
12
10
IC in mA 8
6
4
2

80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

VCE in Volts

0 mA

12 V
IC =
1 kW
1 kW

RC

Mental
short
RB
VBB

12 V

12 V

VCC

12 V
= 12 mA
IC =
1 kW

Arus satutasi
100 mA

14
12
10
IC in mA 8
6
4
2

80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

VCE in Volts

0 mA

1 kW

RB
VBB

12 V

Mental
open 12 V

RC

VCC

VCE(cutoff) = VCC
100 mA

14
12
10
IC in mA 8
6
4
2

80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

VCE in Volts

0 mA

load line baru dengan kemiringan yang sama

100 mA

14
12
10
IC in mA 8
6
4
2
0 2 4 6

80 mA
60 mA

40 mA
20 mA
8 10 12 14 16 18
VCE in Volts

0 mA

Ubah RC:
1 kW
750
W

RC

VCE
RB
VBB

12 V

12 V

VCC

Smaller RC menghasilkan steeper slope

100 mA

14
12
10
IC in mA 8
6
4
2
0 2 4 6

80 mA
60 mA

40 mA
20 mA
8 10 12 14 16 18
VCE in Volts

0 mA

Rangkain dapat dioperasikan pada setiap titik pada load line

100 mA

14
12
10
IC in mA 8
6
4
2
0 2 4 6

80 mA
60 mA

40 mA
20 mA
8 10 12 14 16 18
VCE in Volts

0 mA

The operating point is determined by the base current.

VBB - VBE
IB =
RB
1 kW
RC
12 V - 0.7 V
= 40 mA
IB =
283 kW
RB = 283 kW
VBB

12 V

12 V

VCC

The operating point is called the quiescent point.

14
12
10
IC in mA 8
6
4
2

100 mA
80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

VCE in Volts
This Q point is in the linear region.

0 mA

Saturation and cutoff are non-linear operating points.

100 mA

14
12
10
IC in mA 8
6
4
2

80 mA
60 mA

40 mA
20 mA

0 2 4 6

8 10 12 14 16 18

0 mA

VCE in Volts
These Q points are used in switching applications.

Recognizing saturation
Assume linear operation.
Perform calculations for currents and
voltages.
An impossible result means the
assumption is false.
An impossible result indicates saturation.

Base bias
The base current is established by VBB
and RB.
The collector current is b times larger in
linear circuits.
The transistor current gain will have a
large effect on the operating point.
Transistor current gain is unpredictable.

Emitter bias:
VBB - VBE
IE =

RE

= 1.95 mA

IC @ IE

11 kW
kW

15 V

VBB

5V

2.2 kW

RE

VC = 15 V - (1.95 mA)(1 kW) = 13.1 V

VCE = 13.1 V - 4.3 V = 8.8 V

RC

VCC